AZ 5214E Photoresist
AZ® 5214 E:
Image Reversal Resist for High Resolution
Film thickness: 1.0 ... 2.0 μm
UV-sensitivity: i-, h-line (310 - 420 nm), NOT g-line sensitive
Sales volumes: 250ml, 500ml, 1000ml, 2.5L, and 5L
General Information
This special photoresist is intended for lift-off techniques which call for a nega- tive side wall profile. The reversal bake moderately cross-links the exposed re- sist making the developed structures thermally stable up to approx. 130°.
AZ 5214 E in small sales units
Due to the comparably low resist film thickness, the process parameter win- dow for an undercut is rather small thus requiring some optimizations in the ex- posure dose and the reversal bake pa- rameters. Therefore, if the resolution required is not in the sub-μm range, a thicker resist such as the TI 35ES (next section), or the AZ® nLOF 2000 negative resists might be a good alternative.
Development
AZ® 726 MIF or AZ® 351B 1 : 4 recommended, AZ® 326 MIF or AZ® 400K 1 : 4 pos- sible
For further information refer Photoresist
AZ 5214E.pdf
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Materials.
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