AZ e-Beam Photoresist
AZ nLOF 2070 e-beam-grade
Negative working resist for e-beam and i-line exposure
Film thickness: 0.4 ... 0.6 μm
Sensitivity: i-line (310 - 380 nm), e-beam exposure
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L
General Information
This resist is designed for the application as e-beam resist, is chemically amplfied and negative working (cross-linking). It can be further used in a hybrid exposure with e-baem and subsequently i-line exposure or vice versa.
Development
AZ® 826 MIF Developer or AZ® 726 MIF Developer
For further information refer Photoresist
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Kallista are registered trademarks of AZ Electronic
Materials.
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