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Photoresists
Deep-UV Resist
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AZ e-Beam Photoresist

 

AZ nLOF 2070 e-beam-grade 
Negative working resist for e-beam and i-line exposure

Film thickness: 0.4 ... 0.6 μm
Sensitivity:
i-line (310 - 380 nm), e-beam exposure
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L

General Information
This resist is designed for the application as e-beam resist, is chemically amplfied and negative working (cross-linking). It can be further used in a hybrid exposure with e-baem and subsequently i-line exposure or vice versa.

Development
AZ® 826 MIF Developer or AZ® 726 MIF Developer

For further information refer Photoresist



®AZ, the AZ logo, BARLi , Aquatar and Kallista are registered trademarks of AZ Electronic Materials.

Overview
Sales volumes
 

Positive Thin  
AZ® 111 XFS 
AZ® 1505 
AZ® 1512HS 
AZ® 1514H 
AZ® 1518 
AZ® 6612 
AZ® 6624 
AZ® 6632
AZ® MiR 701
AZ® ECI 3027

Positive Thick 
AZ® 4533
AZ® 4562 
AZ® 9260 
AZ® 40XT
 

Negative 
AZ®nLof 2070
AZ® 15nXT 
AZ® 125nXT 

Image Reversal/Lift-off
AZ® 5214E 
TI 35E 
TI 35ES 
TI Plating 
TI xLift  
AZ®nLof 2070
 

Deep-UV Photo Resist
AZ® TX 1311
 

Other Resists
AZ® 520D 
AZ®4999 
TI Spray 
PL 177 
AZ® Aquatar
AZ® Barli II
 

Other Resist Types  
Electroplating Resists
e-Beam Resists
Protective Coating

Spray Coating Resist
P. Circuit Board Resist
Antireflective Coating

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