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Photoresists, Ancillaries,
Etchants, Solvents, and Technical Support
for all Stages of
MicroStructuring and
Lithography
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Photoresists
Developers
Remover/Stripper
Thinner/EBR
Adhesion Promotion
Etchants
Etching Mixtures
Solvents
UV - Filter
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AZ nLof 2070 Photoresist
AZ nLof 2070
AZ® nLOF™ 2000 series i-line photoresists are
uniquely formulated to simplify the historically complex
lift-off lithography process. They make it possible to
run a standard lithography process to get the desired
lift-off profiles. The nLOF 2000 series photoresists
work well in both surfactant and non-surfactant
containing tetramethylammonium hydroxide (TMAH)
developers using standard conditions. The nLOF 2000
series photoresists can be used for coating thicknesses
beyond 7.0 µm, achieving aspect ratios of up to 4:1.
| Features |
Benefits
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| High
throughput |
- i-line dose to print < 100 mJ/cm2 for
film thicknesses 2.0 to 3.5 µm
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| Streamlined
lift-off process |
- Standard single-layer lithography process to
achieve lift-off profiles; no extra process
steps required
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| Process
compatibility |
- Easy integration into an existing process
with standard processing conditions
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| Process
versatility |
- Obtain lift-off profiles with resist
thickness > 7.0 µm, with uniform profiles
up to 4:1 aspect ratios
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For further information refer Photoresist
AZ nLOF 2070.pdf
®AZ, the AZ logo, BARLi , Aquatar and
Kallista are registered trademarks of AZ Electronic
Materials.
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