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Electroplating Photoresists

AZ 15nXT (Datasheet as PDF)
AZ 125nXT (Datasheet as PDF)
AZ 40XT (Datasheet as PDF)
AZ 9260 (Datasheet as PDF)

New Negativeresist - AZ^® 15 nXT
AZ^® 15 nXT is a cross-linking, Cu-compatible negative resist especially designed for electro plating: Excellent adhesion, no underplating, vertical sidewall profiles, wide compatibility to plating solutions, including Cu, Ni, and Au.
Sensitivity: i-line
Developer: TMAH-based (AZ^® 326/726/826 MIF)
Remover: Easily strips after plating; stripped completely in AZ^® Kwik Strip at 70°C for 3 min.

AZ^® 15 nXT structures (resist film thickness 10 μm)

For further information refer this new negative Fotoresist AZ 15nXT.pdf

New Negativeresist - AZ^® 125 nXT
AZ^® 125 nXT is a cross-linking negative resist for resist film thicknesses up to 100 µm and
even more with very steep sidewalls. The high stability and superior adhesion make the AZ^®
125 nXT well suited for most electroplating applications where very thick films are required.
This resist requires no post exposure bake or any delays between the process steps.

• 30 … 100 µm via single-coating
• Aqueous alkaline developers (such as the TMAH-based AZ 326/726/827 MIF)
• Excellent adhesion, no underplating
• No post exposure bake, no delays between process steps required
• Wide substrate compatibility: Cu, Au, Ti, NiFe, GaAs…
• Wide plating compatibility: Cu, Ni, Au, solder …
• Standard wet stripping processes

For further info AZ 125 nXT.pdf nd for further details for processing AZ 125 nXT details for processing.pdf

AZ^® 40 XT
AZ^® 40 XT is a thick positive chemically amplified photoresist with superior performance for wet and dry processes

• Vertical profiles on aligners at resist film thicknesses > 30 µm
• Excellent photospeed; good develop time (TMAH Developer compatible)
• Superior overall throughput
• Superior adhesion on substrates
• Superior DRIE performance, ideal for MEMS
• Copper substrate and good plating compatibility
• Standard wet strip process for removal

For further information refer AZ 40 XT.pdf

AZ 9260 thick film photoresist 
AZ^® 9260 thick film photoresist is designed for the more demanding higher-resolution thick resist requirements. It provides high-resolution with superior aspect ratios, as well as wide focus and exposure latitude and good sidewall profiles. AZ^® 9260 photoresisti is available for a film thicknesses up to 24 µm.
Critical dimension resolutions range from < 1 µm lines and spaces at a film thickness of 4.6 µm, to 3.5 µm lines and spaces at a film thickness of 24 µm on silicon using today's standard broadband exposure tools. Aspect ratios of 5 - 7 can be achieved.
Under the guidance of leading thin-film recording head manufacturers, AZ^® 9260 photoresist is optimized for both coil plating and top pole recording head applications.
Sensitivity to both h- and i-line makes AZ^® 9260 photoresist capable for both broadband and i-line steppers.
Recommended developers are inorganicbased upon potassium hydroxide. The preferred developer is AZ^® 400K Developer 1:4, a buffered developer designed to maximize bath life and process stability. For integrated circuit applications, TMAH developers such as AZ^® 826 MIF developer can be used.
 
For further information refer AZ 9260.pdf

^®AZ, the AZ logo, BARLi , Aquatar and Kallista are registered trademarks of AZ Electronic Materials.