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Image Reversal Photoresists

AZ 5214E (Datasheet as PDF)
TI 35E  (Datasheet as PDF)
TI 35ES  (Datasheet as PDF)
TI Plating  (Datasheet as PDF)
TI xLift  (Datasheet as PDF)
  TI Spray (Datasheet as PDF)
AZ nLof 2070 (Datasheet as PDF)

What image reversal means...

...and for what it is good for: 

AZ 5214E
AZ^® 5214 E is a very special photoresist which is capable of image reversal. Exposed areas may be selectively cross-linked by applying a bake cycle after exposure. A flood exposure before development converts unexposed areas soluble, resulting in a negative tone image. The profile generated by such processing has a negative shape (wall profile) allowing for use in lift-off techniques. AZ^® 5214 E is the only available viscosity
 
AZ 5214 E in small sales units 
due to a increasing number of requests we offer now the AZ^® 5214 E beside the 2,5 Liter units also in 250 cc and 1000 cc bottles. 
 
For further information refer Photoresist AZ 5214E.pdf 

TI 35E 
TI 35E is a image reversal photoresist for wet-etching.
Thickness range 2.5 .. 4.0 µm 
UV-Sensitivity i, h, and g-line (310 - 440 µm), broadband and monochromatic
TI 35E is specially designed for the application in the so called "image reversal technology" for wet chemical treatment:

• Etching of Si1-xNx deposited at 400 °C with PECVD
• Etching of stoichiometric SiN in BHF (12.5% HF)
• Etching of thick thermal SiO2 with 20% HF, no visible degradation of resist after 10 min
• Possible etching in HF conc. (50%) for several minutes
• Direct mesa grooving without SiO2 masking

 
For further information Photoresist TI 35E

TI 35ES 
TI 35ES is an image reversal photoresist for lift-off and dry-etching.
Coating thickness range and exposure 
Thickness range 2.5 .. 4.0 µm 
UV-Sensitivity i, h, and g-line (310 - 440 µm), broadband and monochromatic 
General Information
TI 35ES is specially designed for the application in the so called "image reversal technology" for:

• subsequent lift-off of deposited layers
• plasma etching with very low resist erosion

For harsh chemical attack, such as direct mesa grooving in HF-HNO3 containing media or etching in high HF-concentrations prefer TI 35E. At a resist thickness of 3.5 µm enables lift-off of evaporated solid films up to a thickness of 5 µm. The typical aspect ratio of the structured features achievable is in the range of 1.6 .. 2.0. 
Further Information
The following pages give some impressions of the potential of TI 35ES. The technical data sheets for detailed processing instructions are available on request.

TI 35ES for lift-off

TI 35ES for dry-echting
Extraordinary stability of TI 35ES in reversal mode (resist erosion by a factor of approx. 2 reduced as compared to most positive resists) allows dry etching of several µm of SiO2
Both REM picutres:
TI 35ES in reversal mode. 
No plasma etching residual remover 
Etching of 3.2 µm SiO2 with CHF3 + O

MicroChemicals gratefully acknowledges Mesa+ Research Institute, University of Twente, Netherlands for verifying TI 35ES results and providing the pictures shown in this brochure.
  
For further information refer Photoresist TI 35ES

TI Plating 
The TI Plating photoresist is optimized for spray coating of thin (2 µm) to very thick (20 µm) films. TI Plating can either be processed in positive mode or negative (image reversal) mode This technical data sheet intends to give you a guideline for process parameters for various applications. However, the optimum values for e.g. dilution, exposure dose, or development depend on the individual equipment and need to be adjusted on each individual demand.
  
For further information refer Photoresist TI Plating

TI xLift 
TI xLift is a image reversal photoresist for lift-off of thick films.
Thickness 5 .. 15 µm, up to 25 µm with special coating techniques 
UV-Sensitivity i, h, and g-line (310 - 440 µm), broadband and monochromatic 
General Information
TI xLift is specially designed for the application in the so called "image reversal technology" for subsequent lift-off of thick and very thick deposited layers. For harsh chemical attack, such as direct mesa grooving in HF-HNO3 containing media or etching in high HF-concentrations prefer TI 35E.

What 'adjustable undercut means' - two examples

 
For further information refer Photoresist MicroChemicals TI xLift

TI Spray
The TI Spray Photoresist is specially designed for the application in the so called “image reversal technology” for:

• subsequent lift-off of deposited layers
• wet chemical treatment in HF containing etching solutions
• direct mesa grooving.

The viscosity enables a direct use in spray coating equipment for a target thickness of 1 to 10 µm. The typical aspect ratio of the structured features achievable is in the range of 1.6 .. 2.0.
 
This technical data sheet intends to give you a guide-line for process parameters for various applications. However, the optimum values for e.g. exposure dose, or development depend on the individual equipment and need to be adjusted on each individual demand.
 
For further information refer Photoresist MicroChemicals TI Spray

AZ nLof 2070
AZ^® nLOF™ 2000 series i-line photoresists are uniquely formulated to simplify the historically complex lift-off lithography process. They make it possible to run a standard lithography process to get the desired lift-off profiles. The nLOF 2000 series photoresists work well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers using standard conditions. The nLOF 2000 series photoresists can be used for coating thicknesses beyond 7.0 µm, achieving aspect ratios of up to 4:1.

  
For further information refer Photoresist AZ nLOF 2070.pdf

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