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TI 35E Photoresist

TI 35E 
TI 35E is a image reversal photoresist for wet-etching.
Thickness range 2.5 .. 4.0 µm 
UV-Sensitivity i, h, and g-line (310 - 440 µm), broadband and monochromatic
TI 35E is specially designed for the application in the so called "image reversal technology" for wet chemical treatment:

  • Etching of Si1-xNx deposited at 400 °C with PECVD
  • Etching of stoichiometric SiN in BHF (12.5% HF)
  • Etching of thick thermal SiO2 with 20% HF, no visible degradation of resist after 10 min
  • Possible etching in HF conc. (50%) for several minutes
  • Direct mesa grooving without SiO2 masking

 
For further information Photoresist TI 35E

 

  

  

 

 


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AZ® 4533
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AZ® 9260
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AZ®nLof 2070
AZ® 15nXT 
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Image Reversal/Lift-off
AZ® 5214E 
TI 35E 
TI 35ES 
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AZ®nLof 2070
 

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AZ®4999 
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PL 177 
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