TI 35E Photoresist
TI
35E
TI 35E is a image reversal photoresist for
wet-etching.
Thickness range 2.5 .. 4.0 µm
UV-Sensitivity i, h, and g-line (310 - 440 µm),
broadband and monochromatic
TI 35E is specially designed for the application in the
so called "image reversal technology" for wet
chemical treatment:
-
Etching of Si1-xNx deposited at 400 °C with PECVD
-
Etching of stoichiometric SiN in BHF (12.5% HF)
-
Etching of thick thermal SiO2 with 20% HF, no visible
degradation of resist after 10 min
-
Possible etching in HF conc. (50%) for several minutes
-
Direct mesa grooving without SiO2 masking
For further information Photoresist
TI 35E
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Materials.
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