TI 35ES Photoresist
TI
35ES
TI 35ES is an image reversal photoresist for
lift-off and dry-etching.
Coating thickness range and exposure
Thickness range 2.5 .. 4.0 µm
UV-Sensitivity i, h, and g-line (310 - 440 µm),
broadband and monochromatic
General Information
TI 35ES is specially designed for the application in the
so called "image reversal technology" for:
- subsequent lift-off of deposited layers
- plasma etching with very low resist erosion
For harsh chemical attack, such as direct mesa
grooving in HF-HNO3 containing media or etching in high
HF-concentrations prefer TI 35E. At a resist thickness
of 3.5 µm enables lift-off of evaporated solid films up
to a thickness of 5 µm. The typical aspect ratio of the
structured features achievable is in the range of 1.6 ..
2.0.
Further Information
The following pages give some impressions of the
potential of TI 35ES. The technical data sheets for
detailed processing instructions are available on
request.
TI 35ES for lift-off
TI 35ES for dry-echting
Extraordinary stability of TI 35ES in reversal mode (resist
erosion by a factor of approx. 2 reduced as compared to
most positive resists) allows dry etching of several µm
of SiO2
Both REM picutres:
TI 35ES in reversal mode.
No plasma etching residual remover
Etching of 3.2 µm SiO2 with CHF3 + O
MicroChemicals gratefully acknowledges Mesa+ Research
Institute, University of Twente, Netherlands for
verifying TI 35ES results and providing the pictures
shown in this brochure.
For further information refer Photoresist
TI 35ES
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Kallista are registered trademarks of AZ Electronic
Materials.
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