Acids

Acetic Acid (99.8 %)

Thinner, wetting agent and chemical buffer in various etching solutionssuch as Al-etchants. 

For further information please refer to: Acetic Acid.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Hydrofluoric Acid (available in the concentrations: 1%, 10%, and 50%)

Used for etching of SiO2 and (together with HNO3) for etching of silicon.
 
For further information please refer to: Hydrofluoric Acid 50%.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Phosphoric Acid ( H3PO4 - available in the concentration 85%) 

This acid is an ingredient to many etching solutions, such as solutions for etching of Al (Aluminum), GaAs (gallium arsenide), InP (indium phosphide), Ag (silver) or ZnO (zinc oxide). Very hot concentrated phosphoric acid can also be used for etching of SiNx (silicon nitride).

For further information please refer to: Phosphoric Acid.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Buffered Oxide EtchBOE 7:1 (Ammoniumfluoride Etching Solution 87.5:12.5 or Buffered Hydrofluoric Acid)

Used for etching of SiO2. Due to the higher PH value in contrast to unbuffered HF it gives better results in combination with photo resists.
The etch rate on SiO2 is (depending on temperature and SiO2 morphology) in the range of 70-90 nm per minute.

For further information please refer to: Buffered Oxide Etch.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Nitric Acid (69.5 %)

Ingredient of the silicon etchant, and etching solutions for Ga-containingIII/V-semiconductors.

For further information please refer to Nitric Acid 69.5%.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Hydrochloric Acid (37 %)

Ingredient of aqua regia and etching mixtures for various III/V-semiconductors such as InP.

For further information please refer to Hydrochloric Acid 37%.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Sulphuric Acid (96 %)

Ingredient of the piranha-etch as well as etching solutions for Ga-containing
III/V-semiconductors
 
For further information please refer to Sulphuric Acid 96%.pdf.
General information to this topic: Wet Etching.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

Sales Volumes, Shipping and Pricing

Available Sales Units of Buffered Hydrofluoric Acid

  • Bottles á 2.5 L (also single bottles)
  • 30 or 200 L drums on request

Our typical lead time is 1-3 working days within Germany, lead times to other countries on request. On demand, in urgent cases our etchants can be shipped within 24 hours to a destination inside Germany.

Please send us your request.

e-mail: sales(at)microchemicals.com
phone: +49 (0)731 977 343 0
fax: +49 (0)731 977 343 29

Thank you very much for your interest!

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