AZ® 1500-Series: Positive Thin Resists for Wet Etching

Outstanding Properties

The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-μm.

  • Improved resist adhesion to all common substrate materials
  • Broad process parameter window for stable and reproducible litho-processes
  • High development rate
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e. g. with AZ 100 Remover, organic solvents, or aqueous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 0.5 - 3 µm

The members of the AZ 1500 differ in the solvent concentration, the photo active compound content, and special reins for different applications in the field of wet etching:

AZ 1505

The high resolution and adhesion of the AZ 1505 make this resist a commonly used resist mask for Cr etching in photomask production. Resist film thickness at 4000 U/min approx. 500 nm, via variations of the spin speed approx. 400 - 800 nm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 1512HS (Maximum Contrast)

The very high photo active compound concentration of the AZ 1512HS maximises the resist contrast (very high development rate, minimized dark erosion). Resist film thickness at 4000 U/min approx. 1.2 µm, via variations of the spin speed approx. 1.0 - 1.8 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 1514H (Optimized Adhesion)

A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 U/min approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 1518 (Stable Wet Etching Processes)

The elevated resist film thickness of the AZ 1518 improve the stability of the resist mask for wet etching processes. Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.5 - 3 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 1518 HS 

AZ® 1518 HS is characterized by significantly improved adhesion and a very high development rate. Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.45-2.5 µm attainable. Available in 5 L bottles.

AZ 1529

The high photoactive compound concentration of the AZ 1500 resists makes it difficult to expose resist films exceeding 3 µm without the danger of N2 bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ 4533, or the AZ ECI 3027.

Higher Dilutions = Thinner Resist Films < 1 µm?

Photoactive compound rich, highly diluted resists often show a accelerated ageing, sometimes accompanied by particle formation in the resist. Therefore, for resist film thicknesses < 500 nm, we recommend the AZ ECI 3007 for maximum adhesion or thermally stable high resolution AZ 701 MiR. Both resists can be diluted for resist film thicknesses down to 200 - 300 nm.

Higher Resist film Thicknesses > 3 µm?

The high photoactive compound concentration of the AZ 1500 resists makes it difficult to expose resist films exceeding 3 µm without N2 bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ 4533, or the AZ ECI 3027. For resist film thicknesses of 5 µm and beyond, the AZ 4562 or AZ 9260 are recommended.

Suited Developers for the AZ 1500 Resists

If metal ion containing developers can be used, the NaOH-based AZ 351B in a 1 : 4 dilution (for a required resolution < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ 326 MIF or AZ 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ 1500 Resists

For non cross-linked resist films the AZ 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free, nontoxic TechniStrip P1316 as remover.

Technical Data Sheet (TDS)

For further information please refer to the technical data sheet of the AZ 1500 series (AZ 1505, AZ 1512HS, AZ 1514H and AZ 1518): TDS_AZ_1500

 

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

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