AZ® 1500-Series

Positive Thin Resists for Wet Etching

Outstanding Properties

The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-μm.

  • Improved resist adhesion to all common substrate materials
  • Broad process parameter window for stable and reproducible litho-processes
  • High development rate
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e. g. with AZ 100 Remover, organic solvents, or aqueous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 0.5 - 3 µm

The members of the AZ® 1500 differ in the solvent concentration, the photo active compound content, and special reins for different applications in the field of wet etching:

AZ® 1505

The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photomask production. Resist film thickness at 4000 U/min approx. 500 nm, via variations of the spin speed approx. 400 - 800 nm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ® 1512 HS

Maximum Contrast

The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). Resist film thickness at 4000 U/min approx. 1.2 µm, via variations of the spin speed approx. 1.0 - 1.8 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ® 1514H

Optimized Adhesion

A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 U/min approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ® 1518

Stable Wet Etching Processes

The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.5 - 3 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ® 1518 HS 

AZ® 1518 HS is characterized by significantly improved adhesion and a very high development rate. Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.45-2.5 µm attainable.

Sales volumes: 5 L bottles

AZ® 1529

The high photoactive compound concentration of the AZ® 1500 resists makes it difficult to expose resist films exceeding 3 µm without the danger of N2 bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ® 4533, or the AZ® ECI 3027.

Higher Dilutions = Thinner Resist Films < 1 µm?

Photoactive compound rich, highly diluted resists often show a accelerated ageing, sometimes accompanied by particle formation in the resist. Therefore, for resist film thicknesses < 500 nm, we recommend the AZ® ECI 3007 for maximum adhesion or thermally stable high resolution AZ® 701 MiR. Both resists can be diluted for resist film thicknesses down to 200 - 300 nm.

Higher Resist film Thicknesses > 3 µm?

The high photoactive compound concentration of the AZ® 1500 resists makes it difficult to expose resist films exceeding 3 µm without N2 bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ® 4533, or the AZ® ECI 3027. For resist film thicknesses of 5 µm and beyond, the AZ® 4562 or AZ® 9260 are recommended.

Suited Developers for the AZ® 1500 Resists

If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1 : 4 dilution (for a required resolution < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ® 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ® 1500 Resists

For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.

Technical Data Sheet:

For further information please refer to the technical data sheet:
> AZ® 1500 series (TDS)

 

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here:
> application notes

Sales Volumes, Purity Grade and Shipping

Our typical lead time is 1-3 working days within Germany, lead times to other countries on request. On demand, in urgent cases our etchants can be shipped within 24 hours to a destination inside Germany.

Please send us your request.

e-mail: sales(at)microchemicals.com
phone: +49 (0)731 977 343 0
fax: +49 (0)731 977 343 29

Thank you very much for your interest!

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