AZ® 1500-Series

Outstanding Properties

The AZ^_® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-μm.

• Improved resist adhesion to all common substrate materials
• Broad process parameter window for stable and reproducible litho-processes
• High development rate
• Compatible with all common developers (NaOH-, KOH- or TMAH-based)
• Compatible with all common strippers (e. g. with AZ 100 Remover, organic solvents, or aqueous alkaline)
• g-, h- and i-line sensitive (approx. 320 - 440 nm)
• Resist film thickness range approx. 0.5 - 3 µm

The members of the AZ^_® 1500 differ in the solvent concentration, the photo active compound content, and special reins for different applications in the field of wet etching:

AZ^_® 1505

The high resolution and adhesion of the AZ^_® 1505 make this resist a commonly used resist mask for Cr etching in photomask production. Resist film thickness at 4000 U/min approx. 500 nm, via variations of the spin speed approx. 400 - 800 nm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ^_® 1512 HS

Maximum Contrast

The very high photo active compound concentration of the AZ^_® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). Resist film thickness at 4000 U/min approx. 1.2 µm, via variations of the spin speed approx. 1.0 - 1.8 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ^_® 1514 H

Optimized Adhesion

A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 U/min approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ^_® 1518

Stable Wet Etching Processes

The elevated resist film thickness of the AZ^_® 1518 improve the stability of the resist mask for wet etching processes. Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.5 - 3 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml and 5 L bottles

AZ^_® 1529

The high photoactive compound concentration of the AZ^_® 1500 resists makes it difficult to expose resist films exceeding 3 µm without the danger of N^₂ bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ^_® 4533, or the AZ^_® ECI 3027.

Higher Dilutions = Thinner Resist Films < 1 µm?

Photoactive compound rich, highly diluted resists often show a accelerated ageing, sometimes accompanied by particle formation in the resist. Therefore, for resist film thicknesses < 500 nm, we recommend the AZ^_® ECI 3007 for maximum adhesion or thermally stable high resolution AZ^_® 701 MiR. Both resists can be diluted for resist film thicknesses down to 200 - 300 nm.

Higher Resist film Thicknesses > 3 µm?

The high photoactive compound concentration of the AZ^_® 1500 resists makes it difficult to expose resist films exceeding 3 µm without N^₂ bubble formation. For the resist film thickness range starting from 3 µm, we recommend the AZ^_® 4533, or the AZ^_® ECI 3027. For resist film thicknesses of 5 µm and beyond, the AZ^_® 4562 or AZ^_® 9260 are recommended.

Suited Developers for the AZ^_® 1500 Resists

If metal ion containing developers can be used, the NaOH-based AZ^_® 351B in a 1 : 4 dilution (for a required resolution < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ^_® 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ^_® 326 MIF or AZ^_® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ^_® 1500 Resists

For non cross-linked resist films the AZ^_® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.

Technical Data Sheet:

For further information please refer to the technical data sheet:
> AZ^_® 1500 series (TDS)