AZ® 15 nXT (115CPS)- Thick Negative Resist for Plating
We offer two types of AZ 15nXT (AZ 15nXT (450CPS) and AZ 15nXT (115CPS)). The main differnece between the two types is the viscosity.
Here the direct comparison:
Thickness Range and Exposure
AZ 15nXT (450CPS)
Substrate: Si wafer for photospeed testing; Cu wafer for imagesFilm
Thickness: 10 µm
Softbake: 110°C / 180 sec.
UV-sensitivity: i-line (Dose = 400 ± 50 mJ/cm²; Focus: 1 ± 0,5 µm
PEB: 120°C / 60 sec.
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
AZ 15nXT (115 CPS)
Substrate: Si wafer for photospeed testing; Cu wafer for images
Thickness: 6 µm
Softbake: 110°C / 120 sec.
UV-sensitivity: i-line (Dose = 300 ±50 mJ/cm²; Focus: 1 ± 0,5 µm
PEB: 120°C / 60 sec.
Sales volumes: on request
AZ® 15 nXT is a cross-linking negative resist for resist film thicknesses up to approx. 30 µm. The high stability and superior adhesion make the AZ® 15 nXT well suited formost electroplating applications. The resist sidewalls are very steep up to a film thickness of approx. 10 µm, towards higher resist film thicknesses the resist profile becomes more and more negative allowing the electro-deposition of structures whichnarrow from bottom to top.
5 ... 20 µm resist film thickness via single-coating
Aqueous alkaline developers
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, …
Wide plating compatibility: Cu, Ni, Au, …
Standard wet stripping processes
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
The recommended stripper for the AZ 15 nXT is the NMP-free, nontoxic TechniStrip NI555, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) crosslinked AZ 15 nXT resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten theresist removal in the case of very thick or strongly crosslinked resist films.