AZ® 5214 E

Thickness Range and Exposure

Film thickness: 1.0 ... 2.0 µm
UV-sensitivity: i-, h-line (310 - 420 nm), NOT g-line sensitive
Sales volumes: 250 ml, 500 ml, 1000 ml, 2,5 L and 5 L bottles

General Information

This special photoresist is intended forlift-off techniques which call for a negative side wall profile. The reversal bakemoderately cross-links the exposed resist making the developed structuresthermally stable up to approx. 130°C. Due to the comparably low resist filmthickness, the process parameter window for an undercut is rather small thusrequiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thickerresist such as the TI 35ESx (next section), or the AZ^_® nLOF 2000 negative resistsmight be a good alternative.

Development

AZ^_® 726 MIF or AZ^_® 351B 1 : 4 recommended;
AZ^_® 326 MIF or AZ^_® 400K 1 : 4 possible

Technical Data Sheet:

For further information please refer to the technical data sheet:
> AZ^_® 5214 E (TDS)
> AZ 5214E comparison studies negative
> AZ 5214E comparison studies positive

The undercut of AZ® 5214E attained under optimized process parameters.

Source: AZ® 5200-EIR NEGATIVE TONE PROCESSING by AZ-EM®