AZ® 5214 E: Image Reversal Resist for High Resolution

Thickness Range and Exposure

Film thickness: 1.0 ... 2.0 µm
UV-sensitivity: i-, h-line (310 - 420 nm), NOT g-line sensitive
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L

General Information

This special photoresist is intended forlift-off techniques which call for a negative side wall profile. The reversal bakemoderately cross-links the exposed resist making the developed structuresthermally stable up to approx. 130°C. Due to the comparably low resist filmthickness, the process parameter window for an undercut is rather small thusrequiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thickerresist such as the TI 35ES (next section), or the AZ® nLOF 2000 negative resistsmight be a good alternative.

Development

AZ® 726 MIF or AZ® 351B 1 : 4 recommended;
AZ® 326 MIF or AZ® 400K 1 : 4 possible

For further information please refer to Photoresist AZ 5214E.pdf.

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

The undercut of AZ® 5214E attained under optimized process parameters.
Source: AZ® 5200-EIR NEGATIVE TONE PROCESSING by AZ-EM®
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