AZ® 5214 E: Image Reversal Resist for High Resolution
Thickness Range and Exposure
Film thickness: 1.0 ... 2.0 µm
UV-sensitivity: i-, h-line (310 - 420 nm), NOT g-line sensitive
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L
This special photoresist is intended forlift-off techniques which call for a negative side wall profile. The reversal bakemoderately cross-links the exposed resist making the developed structuresthermally stable up to approx. 130°C. Due to the comparably low resist filmthickness, the process parameter window for an undercut is rather small thusrequiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thickerresist such as the TI 35ES (next section), or the AZ® nLOF 2000 negative resistsmight be a good alternative.
AZ® 726 MIF or AZ® 351B 1 : 4 recommended;
AZ® 326 MIF or AZ® 400K 1 : 4 possible
For further information please refer to Photoresist AZ 5214E.pdf.
Lithography Application Notes
Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.