AZ® 6600-Series: Thermally Stable Positive Resists

! PLEASE NOTE !

We would like to inform you about the necessity to discontinue the Photoresist series AZ 66xx (AZ 6612, AZ 6615 and 6632) by end of 2016. Of course it is in our highest interest to work with you on a smooth phase out with minimized impact to your ongoing operations. We therefore would like to stay in close contact with you regarding your product usage and demand forecast until end-of-life.

Alternative Photoresists:

AZ MIR 701 (29 CPS)  Technical datasheet
AZ MIR 701 (14 CPS)  Technnical datasheet

AZ ECI 3007  Technical datasheet
AZ ECI 3012  Technical datasheet
AZ ECI 3027  Technical datasheet

We would be glad to send you a sample of the alternative photoresists for testing. Please send your request to: info(at)microchemicals.de

Outstanding Properties

The AZ® 6600 photoresist series yields an improved thermal stability for a better performance for dry etching, or – if required – a hardbake. The softening point of approx. 130°C makes the AZ® 6600 resists more stable against rounding during baking steps. The lateral resolution depends on the resist film thickness and reaches down to sub-μm.

  • High resolution potential and aspect ratio
  • High thermal stability
  • Broad process parameter window for stable and reproducible litho-processes
  • High development rate
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e. g. with AZ 100 Remover, organic solvents, or aqueous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 1 - 5 µm

The members of the AZ 6000 photoresists only differ in their solvent (= PGMEA) concentration, thus allow a big range in the resist film thickness with one resist system:

AZ 6632

Resist film thickness at 4000 U/min approx. 3.2 µm, via variations of the spin speed approx. 2.5 - 5 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 6632 2.4 µm grade (corresponds to the AZ 6624)

Resist film thickness at 4000 U/min approx. 2.4 µm, via variations of the spin speed approx. 2 - 3.5 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 6632 1.8 µm grade (corresponds to the AZ 6618)

Resist film thickness at 4000 U/min approx. 1.8 µm, via variations of the spin speed approx. 1.5 - 3 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 6632 1.5 µm grade (corresponds to the AZ 6615)

Resist film thickness at 4000 U/min approx. 1.5 µm, via variations of the spin speed approx. 1.2 - 2.2 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ 6632 1.2 µm grade (corresponds to the AZ 6612)

Resist film thickness at 4000 U/min approx. 1.2 µm, via variations of the spin speed approx. 1.0 - 1.8 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

Higher Dilutions = Thinner Resist Films < 1 µm?

Photoactive compound rich, highly diluted resists often show a accelerated ageing, sometimes accompanied by particle formation in the resist. Therefore, for resist film thicknesses < 1 µm, we recommend the thermally stable high resolution AZ 701 MiR.

Higher Resist film Thicknesses > 5 µm?

The high photoactive compound concentration of the AZ 6600 resists makes it difficult to expose resist films exceeding 5 µm without N2 bubble formation. For the resist film thickness range starting from 5 µm, we recommend the AZ 4500 resist series, or the AZ 9200. Both resists however have a softening point around 100°C.

Suited Developers for the AZ 6600 Resists

If metal ion containing developers can be used, the NaOH-based AZ 351B in a 1 : 4 dilution (for a required resolution < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ 326 MIF or AZ 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ 6600 Resists

For non cross-linked resist films the AZ 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free, nontoxic TechniStrip P1316 as remover.

Technical Data Sheet (TDS)

For further information please refer to the technical data sheet of the AZ 6600 series: TDS_AZ_6600

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.