AZ® ECI 3000

High Resolution with Broad Process Window

Outstanding Properties

The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allow feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists:

  • Very high resolution
  • Optimized resist adhesion to all common substrate materials
  • Steep resist sidewalls and high aspect ratio for dry etching or ion implantation
  • Broad process parameter window for stable and reproducible litho-processes
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e. g. mit AZ® 100 Remover, organic solvents, or aquaeous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 0.5 - 5 µm

The members of the AZ® ECI 3000 family (AZ® ECI 3027, AZ® ECI 3012 and AZ® ECI 3007) differ in their solvent concentration and thus allow a broad range in the attainable resist film thickness:

AZ® ECI 3007

Resist film thickness at 4000 rpm spin speed: 0.7 µm, via variation of the spin speed approx. 0.5 - 1 µm attainable. The smaller sales units (250 ml - 2.500 ml) are diluted from the AZ® ECI 3027 ('AZ® ECI 3027 0.7 µm grade').

Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L and 5 L

AZ® ECI 3012

Resist film thickness at 4000 rpm spin speed: 1.2 µm, via variation of the spin speed approx. 1.0 - 2.2 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L and 5 L

AZ® ECI 3027

Resist film thickness at 4000 rpm spin speed: 2.7 µm, via variation of the spin speed approx. 2 - 5 µm attainable.

Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L and 5 L

Suited Developers for the AZ® ECI 3000 Resists

If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1 : 4 dilution (for resist film thicknesses and resolutions < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ® 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ® ECI 3000 Resists

For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.

Technical Data Sheet:

For further information please refer to the Technical Datasheet:
> AZ® ECI 3000 series (TDS)
>
AZ® ECI 3012 (TDS)

 

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here:
> application notes

Sales Volumes, Purity Grade and Shipping

Our typical lead time is 1-3 working days within Germany, lead times to other countries on request. On demand, in urgent cases our etchants can be shipped within 24 hours to a destination inside Germany.

Please send us your request.

e-mail: sales(at)microchemicals.com
phone: +49 (0)731 977 343 0
fax: +49 (0)731 977 343 29

Thank you very much for your interest!

900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness. Source: AZ® ECI 3000 Product Data Sheet by AZ-EM®
450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness. Source: AZ® ECI 3000 Product Data Sheet by AZ-EM®
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