AZ® ECI 3000 - High Resolution with Broad Process Window

Outstanding Properties

The AZ ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allow feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists:

  • Very high resolution
  • Optimized resist adhesion to all common substrate materials
  • Steep resist sidewalls and high aspect ratio for dry etching or ion implantation
  • Broad process parameter window for stable and reproducible litho-processes
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e. g. mit AZ 100 Remover, organic solvents, or aquaeous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 0.5 - 5 µm

The members of the AZ ECI 3000 family (AZ ECI 3027, AZ ECI 3012 and AZ ECI 3007) differ in their solvent concentration and thus allow a broad range in the attainable resist film thickness:

AZ ECI 3007

Resist film thickness at 4000 rpm spin speed: 0.7 µm, via variation of the spin speed approx. 0.5 - 1 µm attainable. Available in 5 L bottles. Smaller sales units (250 ml, 500 ml, 1000 ml) are diluted from the ECI 3027 ('AZ ECI 3027 0.7 µm grade').

AZ ECI 3012

Resist film thickness at 4000 rpm spin speed: 1.2 µm, via variation of the spin speed approx. 1.0 - 2.2 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

AZ ECI 3027

Resist film thickness at 4000 rpm spin speed: 2.7 µm, via variation of the spin speed approx. 2 - 5 µm attainable. Available in 250 ml, 500 ml, 1000 ml and 5 L bottles.

Suited Developers for the AZ ECI 3000 Resists

If metal ion containing developers can be used, the NaOH-based AZ 351B in a 1 : 4 dilution (for resist film thicknesses and resolutions < 1 µm 1 : 5 ... 1 : 6 dilution recommended) is a suited developer.

The KOH-based AZ 400K (also 1 : 4 - 1 : 6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.

If metal ion free developers have to be used, we recommend the TMAH-based AZ 326 MIF or AZ 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3 : 1 ... 2 : 1 (3 parts Developer : 1 part of DI-Water) diluted with water.

Recommended Removers for the AZ ECI 3000 Resists

For non cross-linked resist films the AZ 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free, nontoxic TechniStrip P1316 as remover.

Technical Data Sheet (TDS)

For further information refer to the technical data sheet of the AZ ECI 3000 series (AZ ECI 3007, 3012 and 3007): TDS AZ ECI 3000 and TDS AZ ECI 3012

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness. Source: AZ® ECI 3000 Product Data Sheet by AZ-EM®
450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness. Source: AZ® ECI 3000 Product Data Sheet by AZ-EM®
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