AZ® TX 1311 - DUV Resist for Very High Aspect Ratios
Thickness Range and Exposure
Film thickness: approx. 2 ... 4 µm (55 cP version)
UV-sensitivity: 248 nm
Sales volumes: 3.78 L (gallon)
AZ® TX 1311 is a chemically amplified positive deep-UV (DUV) resist for very highaspect ratios at resist film thicknesses of several µm. AZ® TX 1311 is optimized forhigh energy implant applications, and – due to its high thermal stability – also wellsuited for dry etching.
The AZ® TX 1311 makes, as other chemically amplified DUV resists, high demandson the purity of the cleanroom air as well as constant process conditions. The postexposure bake (PEB) conditions are rather critical, as well as the time span betweensoftbake and PEB and between PEB and development.
400 nm lines or spaces at a resist film thickness of up to 4 µm.
High sensitivity (approx. 20 - 30 mJ/cm2 at 4 µm resist film thickness)
Aqueous alkaline developers (e. g. AZ® 326/726/826 MIF)
Standard wet stripping processes
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
NMP or DMSO are suited removers.
The figures below show cross sections of 400 nm trenches (top) and lines (bottom) at3.8 µm resist film thickness as a function of the depth of focus and the exposuredose.
For further information please refer to Deep-UV Photoresist AZ TX 1311.pdf.
Lithography Application Notes
Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.