E-Beam Resists

AZ® nLOF 2000 - Thermally Stable Negative Resists

Resist-Types, Thickness Range and Exposure

Types:
AZ nLOF 2020
: for film thickness 2 µm @ 3000 rpm
AZ nLOF 2035: for film thickness 3.5 µm @ 3000 rpm
Sales volumes: 3.78 L (gallon)

AZ nLOF 2070: for film thickness 7 µm @ 3000 rpm
Sales volumes: 100ml, 250ml, 500ml, 1000ml, 3.78 L (gallon)

Beside the resist types above, MicroChemicals dilutes the AZ 2070 to different thickness levels. We call them:

AZ nLOF 2020:
AZ 2070 dil. 1:0,40 2.0 µm @ 4000 rpm
AZ nLOF 2035:
AZ 2070 dil. 1:0,18 3.5 µm  @ 4000 rpm
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml
 
UV-sensitivity: i-line (365 nm), NOT g- or h-line sensitive

General Information

AZ® nLOF 2000 is a series of negative resists, whereby the exposed resist remainsafter development with an adjustable undercut. The negative profile in combinationwith its high softening point makes AZ® nLOF 2000 a well-suited resist for lift-off aswell as for any other processes requiring resist structures with high to very high thermal stability.

Outstanding Properties

Very high thermal stability: Almost no rounding of cross-linked resist patterns upto temperatures of 250°C and more.

High chemical stability: Dependant on process parameters, AZ® nLOF 2000 is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).

The e-beam sensitivity of the AZ® nLOF 2000 resists allows the combination of fastUV and high-resolution e-beam lithography. Please contact us for further information!

Development

The recommended developers are AZ® MIF developers such as AZ® 726MIF or AZ®826 MIF. Using other developers may prevent development (start) due to an (accidentally) thermally or optically induced partially crosslinked resist surface.

Resist Removal

The recommended stripper for the AZ nLOF 2000 resists is the NMP-free TechniStrip NI555, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) crosslinked AZ nLOF 2070 resist films.

Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.

Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten theresist removal in the case of very thick or strongly crosslinked resist films.

Technical Data Sheet (TDS)

For further information refer to the technical data sheet of the AZ nLOF 2000 series (AZ nLOF 2020, 2035 and 2070): TDS_AZ_nLOF_2000
Additional information of Photoresist AZ® nLOF 20xx series
Info AZ nLOF2070 e-beam

 

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020. (Source: AZ® nLOF™ 2000 product Data Sheet by AZ-EM).
700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035 (Source: AZ® nLOF™ 2000 product Data Sheet by AZ-EM).
A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm. (Source: AZ® nLOF™ 2000 product Data Sheet by AZ-EM).
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