TI 35E Photoresist

Thickness Range and Exposure

Film thickness: 2.5 .. 4.0 µm 
UV-sensitivity: i, h, and g-line (310 - 440 µm), broadband and monochromatic
Sales volumes: 250 ml, 500 ml, 1.000 ml, 2500 ml und 5 Liter

General Information

TI 35E is specially designed for the application in the so called "image reversal technology" for wet chemical treatment:

• Etching of Si1-xNx deposited at 400 °C with PECVD
• Etching of stoichiometric SiN in BHF (12.5% HF)
• Etching of thick thermal SiO2 with 20% HF, no visible degradation of resist after 10 min
• Possible etching in HF conc. (50%) for several minutes
• Direct mesa grooving without SiO2 masking

Developer

AZ^_® 400K and AZ^_® 826 MIF Developer

Technical Data Sheet:

For further information please refer to the technical data sheet:
> TI 35 E (TDS)