TI 35E Photoresist

Thickness Range and Exposure

Film thickness: 2.5 .. 4.0 µm 
UV-sensitivity: i, h, and g-line (310 - 440 µm), broadband and monochromatic
Sales volumes: 250 ml, 500 ml, 1.000 ml, 2500 ml und 5 Liter

General Information

TI 35E is specially designed for the application in the so called "image reversal technology" for wet chemical treatment:

  • Etching of Si1-xNx deposited at 400 °C with PECVD
  • Etching of stoichiometric SiN in BHF (12.5% HF)
  • Etching of thick thermal SiO2 with 20% HF, no visible degradation of resist after 10 min
  • Possible etching in HF conc. (50%) for several minutes
  • Direct mesa grooving without SiO2 masking


AZ 400K and AZ 826

For further information please refer to Photoresist TI 35E

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

®AZ, the AZ Logo, BARLi and Aquatar are registered trademarks of Merck Performance Materials GmbH.