TI 35E Photoresist

Thickness Range and Exposure

Film thickness: 2.5 .. 4.0 µm 
UV-sensitivity: i, h, and g-line (310 - 440 µm), broadband and monochromatic
Sales volumes: 250 ml, 500 ml, 1.000 ml, 2500 ml und 5 Liter

General Information

TI 35E is specially designed for the application in the so called "image reversal technology" for wet chemical treatment:

  • Etching of Si1-xNx deposited at 400 °C with PECVD
  • Etching of stoichiometric SiN in BHF (12.5% HF)
  • Etching of thick thermal SiO2 with 20% HF, no visible degradation of resist after 10 min
  • Possible etching in HF conc. (50%) for several minutes
  • Direct mesa grooving without SiO2 masking

Developer

AZ 400K and AZ 826

For further information please refer to Photoresist TI 35E

Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

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