TI 35ES: Image Reversal Resist for Lift-off


We would like to inform you about the necessity to discontinue the Photoresist TI 35 ES in the spring of 2017. Due to the availability of a raw material, the production has to be discontinued.

Of course it is in our highest interest to work with you on a smooth phase out with minimized impact to your ongoing operations. We therefore would like to stay in close contact with you regarding your product usage and demand forecast until end-of-life.

Alternative Photoresists:

TI 35 ESX  Technical datasheet
AZ 5214 E Technical datasheet
AZ nLof 20xx Technical datasheet

We would be glad to send you a free sample of the alternative photoresists for testing.
Please send your request to: info(at)microchemicals.de

Thickness Range and Exposure

Film thickness: 2.5 ... 5 µm
UV-sensitivity: i-, h-, g-line (310 - 440 nm), broadband or monochromatic
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L

General Information

A comparably large process window for a resist profile with undercut as well as  ahigh thermal stability (softening point > 130°C, dependant on process parameters)allows reproducible lift-off of also thick evaporated or sputtered films.If the coated materialshould have a thickness of several 100nm or more, evaporation instead of sputtering is strongly recommended in order toprevent coated resistsidewalls. This allowsa fast and clean liftoff.


AZ® 400K 1 : 4, AZ® 726 MIF or AZ® 826 MIF recommended

For further information please refer to Photoresist ti_35es.pdf


Lithography Application Notes

Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.

A stable resist undercut (here: 3.5 µm TI 35ES resist film thickness) allows reproducible and fast lift-off of even thick evaporatedcoatings.
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