TI 35ESX: Image Reversal Resist
Thickness Range and Exposure
Film thickness: 2.5 ... 3.5 µm
UV-sensitivity: i- line 365nm, h-line 405 nm, g-line 435 nm, broadband or monochromatic
Resist Range: 330 - 440 nm
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 5 L
The TI 35ESX resist is specially designed for the application in the so called
“image reversal technology” for:
- subsequent lift-off of deposited layers with a thickness up to 4 μm
- plasma etching
The viscosity of the resist leads to a thickness range depending on the spinspeed
from 2.5-3.5 μm. The typical aspect ratio of the structured features
achievable is in the range of 1.0 ... 2.0.
This technical data sheet intends to give you a guide-line for process
parameters for various applications. However, the optimum values for e.g.
spin profile, exposure dose, or development depend on the individual
equipment and need to be adjusted on each individual demand.
AZ® 400K 1 : 4, AZ® 726 MIF or AZ® 826 MIF recommended.
For further information please refer to Photoresist ti_35esx.pdf
Lithography Application Notes
Our list of application notes with litho-related theoretical and technical background on all stages of micro-structuring can be downloaded from here: application notes.