CZ-Si wafer 4 inch 525 um (100) SSP B-doped
Dummy CZ-Si wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 23 |
€0.00*
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| From 24 |
€6.00*
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Product number:
WSV40525250B1314SNN2
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"
Dummy CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, Bow/Warp < 30 µm Laser-marking: B0001-xxxMSCC
| Diameter (round): | 4 inch |
|---|---|
| Doping: | Bor |
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Dummy |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |