Cu etch 100

General Information

Cu etch 100 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use for semiconductor fabrication or microsystem technology.

Properties

• High etching rate and rate of underetching with Cu as sacrificial layer
• Selectivity to many materials, e.g. common metals used in electroplating industry
• Available in different purity grades
• Compatible to resist masking
• Usage at room temperature

Selectivity

Cu-etch-100 is compatible/etches selective to following materials:

• Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
• Metals: no attack on Cr, Au, Pt, Sn, Ni, Ti, Ta;
  TiW, Ag, Zn is attacked
• Semiconductor materials: Si, SiO2, Si3N4
  (further information an request)

Etching rate

Under normal condition, the etching rate is around 3 to 3.5μm/min (at RT).
The etching solution can be operated continuously when pH is stabilized by frequent addition of ammonia (ammonia is evaporating over time, depending on the circulation conditions). Without replenishing the etching solution is depleted earlier. The capacity is about 30g/l to 50g/l Cu. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20% or the etching time increase is not meeting the requirements.

Technical Data Sheet:

For further information please refer to the technical data sheet:
> CU etch 100 (TDS)
> Wet Etching
> Wet etching metals

Sales Volumes, Purity Grade and Shipping

Available Sales Units:

• Bottles á 5 L or 1 L 

Our typical lead time is 1-3 working days within Germany, lead times to other countries on request. On demand, in urgent cases our etchants can be shipped within 24 hours to a destination inside Germany.

Please send us your request.

e-mail: sales(at)microchemicals.com
phone: +49 (0)731 977 343 0
fax: +49 (0)731 977 343 29

Thank you very much for your interest!