We offer two types of AZ^_® 15nXT (AZ^_® 15nXT (450CPS) and AZ^® 15nXT (115CPS)). The main differnece between the two types is the viscosity.

Here the direct comparison:

Thickness Range and Exposure

General Information

AZ^_® 15 nXT is a cross-linking negative resist for resist film thicknesses up to approx. 30 µm. The high stability and superior adhesion make the AZ^_® 15 nXT well suited formost electroplating applications. The resist sidewalls are very steep up to a film thickness of approx. 10 µm, towards higher resist film thicknesses the resist profile becomes more and more negative allowing the electro-deposition of structures whichnarrow from bottom to top.

Outstanding Properties

• 5 ... 20 µm resist film thickness via single-coating
• Aqueous alkaline developers
• Excellent adhesion, no underplating
• Wide substrate compatibility: Cu, Au, Ti, NiFe, …
• Wide plating compatibility: Cu, Ni, Au, …
• Standard wet stripping processes

Developer

We recommend the TMAH-based, ready-to-use AZ^_® 326 MIF Developer, AZ^_® 726 MIF Developer or AZ^_® 826 MIF Developer.

Resist Removal

The recommended stripper for the AZ_^® 15 nXT is the NMP-free, nontoxic TechniStrip NI555, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) crosslinked AZ_^® 15 nXT resist films.

Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.

Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten theresist removal in the case of very thick or strongly crosslinked resist films.

Technical Data Sheet

For further information please refer to the Technical Datasheet:
> AZ 15 nXT (Series)
> AZ 15 nXT (450 CPS)
> AZ 15 nXT (115 CPS)
> Additional Information

General Information

AZ^_® 125 nXT is a cross-linking negative resist for resist film thicknesses up to 100 µm with standard parameters, and even more (1 mm resist film thickness realized!) with very steep sidewalls. The high stability and superior adhesion make the AZ^_® 125 nXT well suited for mostelectroplating applications where very thick films are required. This resist requires neither a post exposure bake nor any delays between the process steps (such as a rehydration step, or a delay for outgassing after exposure).

Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2,5 L and 3,78 L bottles

Outstanding Properties

• 30 - 100 µm resist film thickness via single-coating
• Up to 1 mm resist film thickness possible
• Aqueous alkaline developers (e. g. AZ^_® 326/726/826 MIF)
• No post exposure bake, photo-polymerization during exposure
• No rehydration required, no N_²-formation during exposure
• Very good adhesion, no underplating
• Wet stripping processes (e. g. TechniStrip P1316)
• Optimized for electroplating, wet- and dry etching

Developer

We recommend the TMAH-based, ready-to-use AZ^_® 326 MIF Developer, AZ^_® 726 MIF Developer or AZ^_® 826 MIF Developer.

Resist Removal

The recommended stripper for the AZ^_® 125nXT is the NMP-free TechniStrip P1316, in case of alkaline senstitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten theresist removal in the case of very thick resist films.

Technical Data Sheet:

For further information please refer to the technical data sheet:
> AZ_125nXT (TDS)
> AZ 125nXT (Additional Information)

General Information

AZ^_® 40 XT is a chemically amplified ultrathick positive resist. The field of application of the AZ^_® 40 XT starts at 15 - 30 µm, where litho-processes with conventional positive resists become very time-consuming due to increasing delays for rehydraion of N^₂-outgassing, both not required for the AZ^_® 40 XT.

Even for very high resist film thicknesses, AZ^_® 40 XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification, and shows a high development rate. Therefore, processing of the AZ^_® 40 XT goes much faster as compared to conventional thick resists.

Two points have to be considered when starting with the AZ^_® 40 XT:

• The maximum softbake temperature must not be applied abruptly, in order prevent the formation of bubbles in the resist film. We recommend eirger the usage of a proximity hotplate, or a temperature ramp on a contact hotplate.
• For the AZ^_® 40 XT, a post exposure bake is obligatory in order to complete the photoreaction and make the resit developable.

Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2,5 L and 3,78 L bottles

Outstanding Properties of AZ^_® 40 XT

• 15 - 100 µm resist film thickness via single-coating
• Aqueous alkaline developers (e. g. AZ^_® 326/726/826 MIF)
• No rehydration required, no N_²-formation during exposure
• Very good adhesion, very steep resist sidewalls
• Can be stripped wet- and dry-chemically
• Optimized for electroplating, wet- and dry etching

Technical Data Sheet:

For further information please refer to the Technical Datasheet:
> AZ 40XT (TDS)