AZ 10XT Photoresist (520cP) - 3.785 l
Merck Performance Materials GmbH
AZ® 10XT is a thick positive resist with high resolution potential for wet etching and plating applications.
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Product number:
1A010XT00
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ 10XT Photoresist (520cP) - 3.785 l"
AZ® 10XT (520CPS)
Thick Resists for High Resolution
General Information
Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions:
- 4.0 µm: 100g AZ® 10XT + 13g PGMEA
- 3.0 µm: 100g AZ® 10XT + 23g PGMEA
- 2.0 µm: 100g AZ® 10XT + 42g PGMEA
- 1.5 µm: 100g AZ® 10XT + 55g PGMEA
- 1.0 µm: 100g AZ® 10XT + 88g PGMEA
The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.
3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)
Product Properties
- Good resist adhesion to all common substrate materials
- Compatible with all common developers (KOH- or TMAH-based)
- Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
- h- and i-line sensitive (approx. 320 - 410 nm)
- Resist film thickness range approx. 5 - 30 µm
Developers
The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 10XT (520cps) english
Sicherheitsdatenblatt AZ® 10XT (520cps) german
TDS:
Technical Data Sheet AZ® 10XT (520cps) english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | no |
|---|---|
| Film thickness: | 5.0 – 30.0 µm |
| Film thickness range: | thick (> 5.1µm) |
| High thermal stability: | no |
| Mode: | positive |
| Optimized for: | electroplating, wet etching |
Related products
AZ 3DT-102M-15 - 3.785 l
13DT102153
AZ® 3DT-102M-15
Chemically Amplified Positive Photoresist
General Information
AZ® 3DT-102M-15 is a chemically amplified positive tone photoresist with a very high aspect ratio. It is intended for the use as a mask for dry etching, ion implantation, RDL and electroplating applications (Cu-compatible). It can be used with i-line steppers as well as with conventional mask aligners. The AZ® 3DT-102M-15 is intended for a thickness range of 8 - 20 µm.
Product Properties
Steep sidewalls
Compatible with-copper plating-processes
For TSV, implantation, RDL, electroplating, dry etching
Chemically amplified à PEB obligatory
Compatible with most photoresist stripper (e.g. AZ® 100 Remover, organic solvent based or alkaline)
i-line sensitive (can be used for broadband exposure as well)
Resist film thickness range ca. 8 - 20 µm
Developers
The recommended developers are AZ® 326 MIF or AZ® 726 MIF for the photoresist AZ® 3DT-102M-15.
Removers
The recommended strippers for the AZ® 3DT-102M-15 are AZ® 920 Remover, AZ® 100 Remover, TechniStrip P1316, TechniStrip P1331 and TechniStrip MLO07.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 3DT-102M-15 Photoresist english
Sicherheitsdatenblatt AZ® 3DT-102M-15 Fotolack german
TDS:
Technical Data Sheet AZ® 3DT-102M-15 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 12XT-20PL-15 Photoresist - 3.785 l
1A012XT1500
AZ® 12XT-20PL-15
Chemically Amplified Positive Tone Photoresists
General Information
AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line)The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.
AZ® 12XT - 2.4mm lines at 10mm film thickness
Product Properties
High thermal stability
Compatible with all common TMAH based developers
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
i-line sensitive (approx. 320 - 390 nm)
Resist film thickness range approx. 5 - 20 µm
Developers
We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer.
Removers
The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 12XT 20PL-15 english
Sicherheitsdatenblatt AZ® 12XT 20PL-15 german
TDS:
Technical Data Sheet AZ® 12XT 20PL-15 english
Application Notes:
Further Information about Photoresist Processing
AZ 40XT-11D Photoresist - 3.785 l
10040XT
Bottle size:
3.785 l
AZ® 40XT
Chemically Amplified Thick Photoresist
General Information
AZ® 40XT for 15 - 100 µm Resist Film Thickness (i-line)
The chemically amplified AZ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® 40XT necessarily requires a Post Exposure Bake to be developed.
Remark: The maximum soft bake temperature must not be applied abruptly, in order to prevent the formation of bubbles in the resist film. We recommend either the usage of a proximity hotplate, or a temperature ramp on a contact hotplate. The correct temperature ramps are crucial for bubble free resist processing with this resist.
Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose
Product Properties
15 - 100 µm resist film thickness via single-coating
Aqueous alkaline developers (e.g. AZ® 326/726/2026 MIF)
No rehydration required, no N2-formation during exposure
Very good adhesion, very steep resist sidewalls
Can be stripped wet- and dry-chemically
Optimized for electroplating, wet- and dry etching
i-line sensitive (approx. 330 – 390 nm)
Developers
We recommend common TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer.
Removers
AZ® 40XT photoresist is compatible with industry standard solvent based removers (e.g. NMP, DMSO, AZ® 920 Remover or Technistrip MLO07).
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® 40XT Photoresist english
Sicherheitsdatenblatt AZ® 40XT Fotolack german
TDS:
Technical Data Sheet AZ® 40XT Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 4533 Photoresist - 3.785 l
1A004533
Bottle size:
3.785 l
AZ® 4533
Thick Resists with Optimized Adhesion
General Information
The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 - 5 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Further Information
MSDS:
Safety Data Sheet AZ® 4533 Photoresist english
Sicherheitsdatenblatt AZ® 4533 Fotolack german
TDS:
Technical Data Sheet AZ® 4533 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 4562 Photoresist - 3.785 l
1A004562
Bottle size:
3.785 l
AZ® 4562
Thick Resists with Optimized Adhesion
General Information
The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate.
A resist film thicknes up to 30 µm can be achieved by single-coating with adjusted spin profiles (short spin times at medium spin speed). Higher layer thicknesses can be achieved by multiple coating. Higher film thickness attainable with multiple coating.
Please note: Resist Film Thicknesses > 30 µm
Generally, the AZ® 4562 can be coated and processed up to 30 µm and beyond. However, softbake, rehydration, exposure and development become very time-consuming in this thickness range. Additionally, even the rather transparent AZ® 4562 photoresist may form N2-bubbles during exposure when applied too thick. Therefore, for resist film thicknesses > 20 µm, we strongly recommend the chemically amplified AZ® 40XT.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 4562 Photoresist english
Sicherheitsdatenblatt AZ® 4562 Fotolack german
TDS:
Technical Data Sheet AZ® 4562 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ IPS-6090 Photoresist - 3.785 l
1006090
Bottle size:
3.785 l
AZ® IPS-6090
Positive Thick Resist
General Information
AZ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line)
The chemically amplified AZ® IPS-6090 is, comparable to the AZ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure, and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® IPS-6090 necessarily requires a post exposure bake to be developed. It has been developed for use as patterning in semiconductors advanced packaging application (3DIC/TSV, CU Pillar, WLCSP, MEMS).
IPS 6050 (80 µm resist film thickness)
Product Properties
Very high resolution
High aspect ratio
Low exposure dose for the thickness of the film
Straight pattern profile and footing free
i-line sensitive, 330 – 390 nm
Film thickness range: 30 - 150 µm
Suited for applications such as electro chemical deposition / plating of Cu RDL in WLCSP process
Electro chemical deposition / plating of Cu, Ni, Sn, SnAg, Au for 3DIC, FO and Flipchip processing
Sacrificial layer for Si etching process in TSV
Sacrificial layer for SiO2 or SiN etching process in CMOS sensor processing
Developers
We recommend AZ® 326 MIF Developer or AZ® 726 MIF Developer (this one contains surfactants) for the photoresist AZ® IPS-6090.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover or the TechniStrip P1331.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® IPS-6090 Photoresist english
Sicherheitsdatenblatt AZ® IPS-6090 Fotolack german
TDS:
Technical Data Sheet AZ® IPS-6090 english
Information AZ® IPS-6090 english
Application Notes:
Further Information about Photoresist Processing
AZ P4110 Photoresist - 3.785 l
1A0P4110
AZ® P4110
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Resist film thickness: 0.9 - 1.3 µm
Steep wall profiles, high aspect ratios
Sensitive to g-, h-, and i-line
Recommended developers: KOH-based (e.g. AZ® 400K) or TMAH-based (e.g. AZ® 2026 MIF)
Standard strippers (e.g. AZ® 100 Remover, TechniStrip P1316)
Thinner and edge bead remover: AZ® EBR Solvent or PGMEA
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4110 Photoresist english
Sicherheitsdatenblatt AZ® P4110 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4620 Photoresist - 3.785 l
1A0P4620
Bottle size:
3.785 l
AZ® P4620
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
AZ® P4620 (15µm holes at 24µm film thickness for Au plating)
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR 70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4620 Photoresist english
Sicherheitsdatenblatt AZ® P4620 Fotolack german
TDS:
Technical Data Sheet AZ® P4620 Photoresist english
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4903 Photoresist - 3.785 l
1A0P4903
AZ® P4903
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 10 - 35 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4903 Photoresist english
Sicherheitsdatenblatt AZ® P4903 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
PL 177 Photoresist - 3.785 l
1A000177
Bottle size:
3.785 l
AZ® PL 177
Positive Thick Resist
General Information
AZ® PL 177 is a positive tone liquid photoresist for the application in various coating techniques, especially for printed circuit boards manufacturing. AZ® PL 177 is dyed with a blue/violet colour for easy inspection after coating. It can be used for spin coating as well as for dip coating or for spray- or roller-coating. It is especially suited for wet chemical etching due to its outstanding adhesion properties and chemical stability. It is a general purpose resist and fits to all applications where high resolution and high thermal stability are not important.
The AZ® PL 177 is a more inexpensive resist for lower demands regarding resolution and sidewall steepness. With a resist film thickness of approx. 5 µm at 4000 rpm, a resolution of approx. 4 - 5 µm is possible.
Product Properties
Good drying behaviour
Aqueous-alkaline process ability
PGMEA based formulation
Very good adhesion properties to many types of substrates
Blue/violet coloured for easy inspection
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 4 - 8 µm
Developers
As a developer, we recommend the NaOH-based AZ® 351B, the KOH-based AZ® 400K or TMAH-based devel¬oper such as the AZ® 2026 MIF. AZ Developer and even simple aqueous KOH or NaOH solutions can be used.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent, PGMEA or MEK. AZ® EBR 70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® PL177 Photoresist english
Sicherheitsdatenblatt AZ® PL177 Fotolack german
TDS:
Technical Data Sheet AZ® PL177 Photoresist english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic Developers
General Information
AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
Further Information
MSDS:
Safety Data Sheet AZ® 400K Developer english
Sicherheitsdatenblatt AZ® 400K Entwickler german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Dev 1:4 - 5.00 l
1004145
AZ® 400K Developer 1:4
Inorganic Developers
General Information
In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT.
Further Information
MSDS:
Safety Data Sheet AZ® 400K 1:4 Developer english
Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german
TDS:
Technical Data Sheet AZ® 400K 1:4 Developer english
Information AZ® 400K 1:4 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german