ANTI-REFLECTIVE COATINGS
The thickness of thin photoresist layers and their homogeneity is usually in the order of magnitude of the exposure wavelength. As photoresists are usually exposed with discrete wavelengths or monochromatically , interference effects between the incident and reflected light on the resist surface or substrate lead to an inhomogeneous distribution of light intensity in the direction of incidence of the light.
Further Information:
> Application areas and compatibilities
> Image Reversal Resist Processing
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AZ AQUATAR-VIII-A 45 - 0.25 l
1008A4502
Bottle size:
0.25 l
AZ Aquatar ®-VIII A 45
Antireflective Coating
General Information
AZ® Aquatar -VIII A45 is a top layer anti-reflective coating for use with g- and i-line. AZ® Aquatar -VIII A45 acts like an optical coating at the interface photoresist/air and improves image contrast.
Multiple reflections within the photoresist are also suppressed, the result is generally a reduction of the amplitude of the swing curve to 1/3rd. Application is very simple: it is just spun on top of the photoresist, no additional bake cycle is required and the standard development cycle removes it.
This simple process reduces line width variation over topography significantly, however does not suppress reflective notching.
Product Properties
AZ® Aquatar -VIII A45 top anti-reflective coating is an aqueous material for use with positive photoresists in the semiconductor industry. The effect of the anti-reflective coating is to dramatically reduce the amplitude of the resist swing curve. When optimized this change in swing curve amplitude can be up to a factor of three times reduction. Optimum film thickness can be calculated using the following function:
Film thickness = lambda : 4n
lambda = wavelength of exposure light
n = refractive index of AZ® Aquatar
After exposure AZ® Aquatar top anti-reflective coating is removed using either a water rinse or the aqueous positive resist developer itself. As soon as the anti-reflective coating is removed the resist will develop as normal. An optimized process is confirmed when the original resist swing curve is seen to be exactly 180° out of phase with the modified swing curve derived from the use of AZ® Aquatar top anti-reflective coating. When this is not the case, there will still be a significant swing curve reduction but not to the same extent as a fully optimized process. When used with AZ® i-line photoresists, image bias, usually seen as a difference in dimension between dense and isolated lines is dramatically reduced to values close to 0 %. A top anti-reflective coating will not reduce reflective notching caused by exposing light being reflected from the substrate. For this process situation a bottom anti-reflective coating, AZ® Aquatar, AZ® Barli, is recommended.
Developers
All aqueous alkaline developers.
Removers
Not required, water soluble.
Thinning/ Edge Bead Removal
Not required, water soluble.
Further Information
MSDS:
Safety Data Sheet AZ® Aquatar -VIII A45 Photoresist english
Sicherheitsdatenblatt AZ® Aquatar -VIII A45 Fotolack german
TDS:
Technical Data Sheet AZ® Aquatar Photoresist english
Technical Data Sheet AZ® Aquatar TARC english
Info AZ® Aquatar EN
Application Notes:
Further Information about Photoresist Processing
AZ Barli II 200 - 0.25 l
10255002
Bottle size:
0.25 l
AZ ® BARLiTM II 200
Antireflective Coating
General Information
AZ® BARLiTM II is a bottom antireflective layer coating for use on highly reflective surfaces in the semiconductor industry. It is designed to work with as antireflective layer between photoresist and substrate and is optimized for i-line exposure tools. Upon completion of the lithographic process, AZ® BARLiTM II is patterned in a dry-etch process.
Product Properties
AZ®BARLiTM II coating material is formulated in photoresist-compatible solvents to simplify the EBR process and to be both environmental and user friendly. AZ®BARLiTM II is tailor-made to yield the near-optimum values for refractive indices (n and k) for i-line lithography, which ensures minimum reflectivity and maximum swing reduction for photoresist layers. Composed of highly absorptive polymer-bound dyes, this material provides excellent coating uniformity and step coverage.
AZ®BARLiTM II shows high etch selectivity (comparable to AZ®BARLiTM) and high thermal stability up to 230°C. It does not show intermixing with photoresist when the bake temperature is higher than 180°C.
AZ®BARLiTM II is available in two thickness grades, 900 A and 2000 A, in order to provide optimum film thickness for the first and the second swing minimum respectively at about 3000 rpm spin speed.
Developers
No restriction.
Removers
Dry Etching.
Edge Bead Removal
We recommend AZ® EBR 70/30 for edge bead removal for best performance.
Further Information
MSDS:
Safety Data Sheet AZ®BARLiTM II 200 Photoresist english
Sicherheitsdatenblatt AZ®BARLiTM II 200 Fotolack german
TDS:
Technical Data Sheet AZ®BARLiTM II Photoresist english
Info AZ®BARLiTM II Photoresist english
Info AZ®BARLiTM II Processing english
Application Notes:
Further Information about Photoresist Processing
AZ Barli II 90 - 3.785 l
1002550
AZ ® BARLiTM II 90
Antireflective Coating
General Information
AZ® BARLiTM II is a bottom antireflective layer coating for use on highly reflective surfaces in the semiconductor industry. It is designed to work with as antireflective layer between photoresist and substrate and is optimized for i-line exposure tools. Upon completion of the lithographic process, AZ® BARLiTM II is patterned in a dry-etch process.
Product Properties
AZ®BARLiTM II coating material is formulated in photoresist-compatible solvents to simplify the EBR process and to be both environmental and user friendly. AZ®BARLiTM II is tailor-made to yield the near-optimum values for refractive indices (n and k) for i-line lithography, which ensures minimum reflectivity and maximum swing reduction for photoresist layers. Composed of highly absorptive polymer-bound dyes, this material provides excellent coating uniformity and step coverage.
AZ®BARLiTM II shows high etch selectivity (comparable to AZ®BARLiTM) and high thermal stability up to 230°C. It does not show intermixing with photoresist when the bake temperature is higher than 180°C.
AZ®BARLiTM II is available in two thickness grades, 900 A and 2000 A, in order to provide optimum film thickness for the first and the second swing minimum respectively at about 3000 rpm spin speed.
Developers
No restriction.
Removers
Dry Etching.
Edge Bead Removal
We recommend AZ® EBR 70/30 for edge bead removal for best performance.
Further Information
MSDS:
Safety Data Sheet AZ®BARLiTM II 90 Photoresist english
Sicherheitsdatenblatt AZ®BARLiTM II 90 Fotolack german
TDS:
Technical Data Sheet AZ®BARLiTM II Photoresist english
Info AZ®BARLiTM II Photoresist english
Info AZ®BARLiTM II Processing english
Application Notes:
Further Information about Photoresist Processing