ACIDS
Hydrochloric acid is usually an uncritical etching medium for photoresists. When etching with hydrofluoric acid, its permeability in photoresist layers must be taken into account. However, unbuffered or buffered hydrofluoric acid can be used for many etching processes without any problems if the photoresist layers are sufficiently thick or the etching times are short. Strongly oxidising acids such as HNO3-containing mixtures or etching mixtures of H2SO4 and H2O2 strongly attack photoresist. Thermal crosslinking of positive resists or the use of crosslinking negative resists can significantly increase the stability of the resist mask.
Further Information:
> Application areas and compatibilities
> Image Reversal Resist Processing
8 Products
Acetic Acid 100 % - 2.50 l - VLSI
TESV1025
Acetic Acid
CH3COOH
General Information
Acetic Acid as surfactant and buffer is a commonly used additive for various etching mixtures.
We supply Acetic Acid (99 %) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Acetic Acid (VLSI) 100 % english
Sicherheitsdatenblatt Essigsäure (VLSI) 100 % german
Specs:
Specs Acetic Acid (VLSI) 100 %
Application Notes:
Wet Etching english
Nasschemisch Ätzen german
BOE 7:1 (87,5 : 12,5) - 2.50 l - VLSI - EVE/EUD!
TBOV1025
BOE 7:1
Buffered Oxide Etch
General Information
BOE is mainly used for etching glasses, quartz and SiO2 films.
We supply BOE 7:1 = buffered hydrofluoric acid (HF : NH4F = 12.5 : 87.5%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
NOTE:
BOE must be stored and transported above +12.5°C. Below this critical temperature of 12.5°C the material forms particles (little crystals). Since these crystals have a higher density, they will accumulate at the bottom of the bottle and will only be completely re-dissolved when the material is stored at temperatures of 30 - 35°C for some days. After this procedure the crystals should be re-dissolved completely and the BOE can be then used without restrictions.
Further Information
MSDS:
Safety Data Sheet BOE 7:1 (VLSI) english
Sicherheitsdatenblatt BOE 7:1 (VLSI) german
Specs:
Specs BOE 7:1 (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Hydrochloric Acid 37% - 2.50 l - VLSI - EVE/EUD!
HHCV1025
Hydrochloric Acid
HCI
General Information
Hydrochloric Acid is an ingredient of various etching mixtures for e.g. ITO, Silver and (together with HNO3 as aqua regia) gold. HCl is suited for the removal of oxide films on many metals.
Our Hydrochloric Acid (37%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
NOTE:
HCl (hydrogen chloride), is a gas that dissolves very well in water and forms hydrochloric acid in dissolved form. With a molar mass of 36 g / mol, hydrogen chloride is a very small molecule, which means that it can diffuse through polymers very well. For reasons of purity, the hydrochloric acid is filled in HD-PE polymer bottles. In order to protect the bottles from particles and contaminations, these bottles (which are intended for the use in clean rooms) are packed in plastic bags. Over the time of storage, however, the hydrogen chloride diffuses through the wall of the bottle, which is made of polymer, and collects in the foil bag. There is air that contains not only carbon dioxide but also water vapor and it can react with the hydrogen chloride, whereby either a white dust or fine droplets can be found in the foil bag. This happens during storage even if there is not the slightest leak in the bottles. This white dust or the possible fine droplets are the reason why the 37% hydrochlo¬ric acid, unlike e.g. sulfuric acid of the same degree of purity, has not a shelf life of 3 years, but is only „durable“ for 1 year. It is therefore not the reason that the acid would not maintain its purity or its properties, but rather the label and also the bottles or foil bags are increasingly affected by the problem described above in the course of storage.
Further Information
MSDS:
Safety Data Sheet Hydrochloric Acid 37% (VLSI) english
Sicherheitsdatenblatt Salzsäure 37% (VLSI) german
Specs:
Specs Hydrochloric Acid 37% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Hydrofluoric Acid EVE 1% - 2.50 l - VLSI - EVE/EUD!
Regular price:
From
€28.30
TAHV0125
Concentration:
1 %
Hydrofluoric Acid
HF
General Information
Hydrofluoric Acid is mainly used for etching glasses, quartz and SiO2 films as well as (mixed with HNO3) for isotropic silicon etching.
We supply hydrofluoric acid (1%, 10% and 50%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Hydrofluoric Acid 1% (VLSI) english
Sicherheitsdatenblatt Hydrofluoric Acid 1% (VLSI) german
Safety Data Sheet Hydrofluoric Acid 10% (VLSI) english
Sicherheitsdatenblatt Hydrofluoric Acid 10% (VLSI) german
Safety Data Sheet Hydrofluoric Acid 50% (VLSI) english
Sicherheitsdatenblatt Hydrofluoric Acid 50% (VLSI) german
Specs:
Specs Hydrofluoric Acid 1% (VLSI)
Specs Hydrofluoric Acid 10% (VLSI)
Specs Hydrofluoric Acid 50% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Hydrogen peroxide 30% - 2.50 l - VLSI - PERSO+EVE/EUD!
THOV1025
Hydrogene Peroxide
H2O2
General Information
H2O2 is an ingredient of the Piranha-etch, RCA-1 and RCA-2 etching solutions, as well as etching solutions for various III/V-semiconductors.
H2O2 (30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Hydrogen Peroxide 30% (VLSI) english
Sicherheitsdatenblatt Hydrogen Peroxide 30% (VLSI) german
Specs:
Specs Hydrogen Peroxide 30% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Nitric Acid 69.5% - 2.50 l - VLSI - PERSO+EVE/EUD!
TSAV1025
Nitric Acid
HNO3
General Information
Nitric Acid is the oxidizing ingredient of many etching mixtures for e.g. Silver, Copper, Aluminium, Silicon, Germanium and (together with HCl as aqua regia) Gold.
We supply Nitric Acid (69%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Nitric Acid 69,5% (VLSI) english
Sicherheitsdatenblatt Nitric Acid 69,5% (VLSI) german
Specs:
Specs Nitric Acid 69,5% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Phosphoric Acid 85% - 2.50 l - VLSI
TPHV1025
Phosphoric Acid
H3PO4
General Information
Phosphoric Acid mixed with HNO3 is an ingredient of many etching mixtures for e.g. Aluminium and many other metals.
We supply Phosphoric Acid (85%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Phosphoric Acid 85% (VLSI) english
Sicherheitsdatenblatt Phosphoric Acid 85% (VLSI) german
Specs:
Specs Phosphoric Acid 85% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
Sulfuric Acid 96% - 2.50 l - VLSI - PERSO+EVE/EUD!
TSWV1025
Sulfuric Acid
H2SO4
General Information
A mixture of Sulfuric Acid with H2O2 is a powerful stripper for organic impurities or residuals on substrates.
We supply Sulfuric Acid (96%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Sulfuric Acid 96% (VLSI) english
Sicherheitsdatenblatt Sulfuric Acid 96% (VLSI) german
Specs:
Specs Sulfuric Acid 96% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing