AZ TFP-650F5 (15CP) Photoresist - 3.785 l

AZ® 1505 Positive Thin Resists for Wet Etching   General Information The AZ® 1505 Photoresist belongs to the AZ® 1500 Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® 1500 Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® 1500 Photoresist Series compared to thick resists allows for very fast development. AZ® 1505 Photoresist is the thinnest member of the AZ® 1500 Photoresist Series with a resist film thickness of approx. 500 nm at 4000 rpm. This resist is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® 1505 allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® 1514 H Photoresist or AZ® 1518 Photoresist) can be useful, which reduces the risk of pinholes in the resist film caused by particles on the substrate and the corresponding etching defects. Further dilution of the AZ® 1505 is not recommended, as heavily diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does have to be diluted, the corresponding batches should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351Bor AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® 1505 Photoresist is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 1505 anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 1505 Photoresist english Safety Data Sheet AZ® 1505 Photoresist german TDS: Technical Data Sheet AZ® 1505 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1512 HS Positive Thin Resists for Wet Etching   General Information The AZ® 1512 HS Photoresist belongs to the AZ® 1500 Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® 1500 Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100°C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® 1500 Photoresist Series compared to thick resists allows for very fast development. AZ® 1512 HS Photoresist achieves a resist film thickness of approx. 1.3 µm at 4000 rpm and is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® 1512 HS allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® 1518 Photoresist) can be useful, which reduces the risk of pinholes in the resist layer caused by particles on the substrate and the corresponding etching defects. AZ® 1512 HS Photoresist has the highest photoinitiator concentration within the AZ® 1500 Photoresist Series, is correspondingly high in contrast, and shows a particularly high development rate. Diluting the AZ® 1512 HS is not advisable, as diluted resists that are very rich in photoinitiators tend to quickly form particles. If the resist still needs to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1:4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K (also typically 1:4 diluted with water). For very fine resist structures, a slightly higher dilution of the developer can be helpful. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2:1 to 1:1 dilution (developer : water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® 1515 HS Photoresistis not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 1512 HS anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 1512 HS Photoresist english Safety Data Sheet AZ® 1512 HS Photoresist german TDS: Technical Data Sheet AZ® 1512 HS Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1514 H Positive Thin Resist for Wet Etching   General Information The AZ® 1514 H Photoresist belongs to the AZ® 1500 Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® 1500 Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100°C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® 1500 Photoresist Series compared to thick resists allows for very fast development. AZ® 1514 H Photoresist achieves a resist film thickness of approx. 1.5 µm at 4000 rpm and has particularly good adhesion to metallic substrate materials, making it suitable as an etching mask for aluminum, chrome and other metals, for example, but also for etching non-metallic layers. It is not advisable to dilute the AZ® 1514 H Photoresist too much, as diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does need to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1:4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K (also typically 1:4 diluted with water). For very fine resist structures, a slightly higher dilution of the developer can be helpful. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2:1 to 1:1 dilution (developer : water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® 1514 H Photoresist is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 1514 H anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 1514 H Photoresist english Safety Data Sheet AZ® 1514 H Photoresist german TDS: Technical Data Sheet AZ® 1514 H Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1518 Positive Thin Resist for Wet Etching   General Information AZ® 1518 belongs to the AZ® 1500 photoresist series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® 1500 resist family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® 1500 series compared to thick resists allows for very fast development. AZ® 1518 achieves a resist film thickness of approx. 1.8 µm at 4000 rpm and is often used for etching metallic or non-metallic layers. It is not advisable to dilute the AZ® 1518 below the level of the AZ® 1505, as diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does have to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. AZ® 1518 should not be processed with a resist film thickness significantly thicker than approx. 2 µm, as the high photoinitiator concentration can lead to the formation of nitrogen bubbles in the resist film when exposed to light as the resist thickness increases. If thicker resist films are required, the AZ® 4533, which has a significantly lower photoinitiator content, is recommended. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1: 4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K K (also typically 1:4 diluted with water). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2: 1 to 1:1 dilution (developer:water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, a stronger dilution of AZ® 1518 is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent.is the recommended solvent. PGMEA is the solvent for AZ® 1518 anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 1518 Photoresist english Safety Data Sheet AZ® 1518 Photoresist german TDS: Technical Data Sheet AZ® 1518 Photoresist english Application Notes: Further Information about Photoresist Processing)

AZ® ECI 3007 High Resolution with Broad Process Window   General Information AZ® ECI 3007 belongs to the AZ® ECI 3000 series of positive thin resists (g-, h- and i-line sensitive), whose main applications are as a resist mask for dry etching, RIE, ion implantation or lift-off processes. Product Properties AZ® ECI 3000 resist family is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 125 °C). AZ® ECI 3000 resists require a significantly lower exposure dose compared to other positive resists, but still develop quickly. AZ® ECI 3007 is the thinnest member of this resist series with a resist film thickness of approx. 700 nm at 3000 rpm. This resist is often used for dry etching, RIE or lift-off processes and, under optimized process parameters, allows a resolution well in the sub-micrometer range. If such a high resolution is not required, a slightly thicker resist from this series (for example AZ® ECI 3012, AZ® ECI 3027) can be useful. If necessary, the AZ® ECI 3007 can easily be further diluted with PGMEA = AZ® EBR Solvent. Paints from the AZ® 1500 or 4500 series are recommended for applications with high requirements for very good resist adhesion such as wet etching and galvanic deposition. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1: 4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® ECI 3007 Photoresist english Safety Data Sheet AZ® ECI 3007 Photoresist german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3012 High Resolution with Broad Process Window   General Information AZ® ECI 3012 belongs to the AZ® ECI 3000 series of positive thin resists (g-, h- and i-line sensitive), whose main applications are as a resist mask for dry etching, RIE, ion implantation or lift-off processes.   450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness.   Product Properties AZ® ECI 3000 resist family is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 125 °C). AZ® ECI 3000 resists require a significantly lower exposure dose compared to other positive resists, but still develop quickly. AZ® ECI 3012 covers the resist film thickness range of approx. 1.3 µm at 3000 rpm with adapted spin profiles. This resist is often used for dry etching, RIE or lift-off processes and allows a resolution in the sub-micrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist from this series (for example AZ® ECI 3027) can be useful. If thinner resist layers are required, we recommend AZ® ECI 3007, or alternatively a dilution of AZ® ECI 3012 with PGMEA = AZ® EBR Solvent. For applications with high requirements for very good resist adhesion, such as wet etching and galvanic deposition, we recommend resists from the AZ® 1500 or 4500 series. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF, or 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. with AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1: 4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover, are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® ECI 3012 Photoresist english Safety Data Sheet AZ® ECI 3012 Photoresist german TDS: Technical Data Sheet AZ® ECI 3012 Photoresist english Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3027 High Resolution with Broad Process Window   General Information AZ® ECI 3027 belongs to the AZ® ECI 3000 series of positive resists (g-, h- and i-line sensitive), whose main applications are as a resist mask for dry etching, RIE, ion implantation or lift-off processes.   900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness.   Product Properties AZ® ECI 3000 resist family is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 125 °C). AZ® ECI 3000 resists require a significantly lower exposure dose compared to other positive resists, but still develop quickly. AZ® ECI 3027 covers a resist film thickness of approx. 2.7 µm at 3000 rpm with adapted spin profiles and covers the resist film thickness range of approx. 2 - 4 µm. This resist is often used for dry etching, RIE or lift-off processes. If a resolution in the sub-micrometer range is required, a slightly thinner resist from this series (for example AZ® ECI 3012 or AZ® ECI 3007) may be useful, or alternatively a dilution of the AZ® ECI 3027 with PGMEA = AZ® EBR Solvent. For applications with high requirements for very good resist adhesion such as wet etching and galvanic deposition, resists from the AZ® 1500 or 4500 series are recommended. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® ECI 3027 Photoresist english Safety Data Sheet AZ® ECI 3027 Photoresist german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (14CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR (14CPS) is a positive thin resist (g-, h- and i-line sensitive), the main application of which is as a resist mask for dry etching, RIE, or lift-off processes.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Features AZ® 701 MIR (14CPS) is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 130°C). AZ® 701 MIR (14CPS) achieves a resist film thickness of approx. 800 nm at a spin speed of 4000 rpm and, under optimized process parameters, allows a resolution well in the sub-micrometer range. If such a high resolution is not required and thicker resist layers are desired, the use of the higher-viscosity AZ® 701 MIR (29CPS) is recommended. If necessary, the AZ® 701 MIR (14CPS) can also be (even heavily) diluted with PGMEA = AZ® EBR Solvent. For wet-chemical etching, resists from the AZ® 1500 series with optimized resist adhesion are recommended in this resist film thickness range. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® MIR 701 (14CPS) Photoresist english Safety Data Sheet AZ® MIR 701 (14CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (29CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR (29CPS) is a positive resist (g-, h- and i-line sensitive) in the medium resist film thickness range, whose main applications are as a resist mask for dry etching, RIE, or lift-off processes.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Features AZ® 701 MIR (29CPS) is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 130°C). It achieves a resist film thickness of approx. 2µm at a spin speed of 4000 rpm. If thinner layers or a higher resolution are desired, the use of the lower-viscosity AZ® 701 MIR (14CPS) is recommended. Alternatively, AZ® 701 MIR (14CPS) can easily be heavily diluted with PGMEA = AZ® EBR Solvent. For wet-chemical etching, resists from the AZ® 1500 series with optimized resist adhesion are recommended. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english Safety Data Sheet AZ® MIR 701 (29CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® TFP 650 Flat Panel Display Photoresist   General Information The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers. Product Properties Ultra high photospeed Low dark film loss Optimized resist adhesion Easy removal after hardbake High resistance to harsh etchants Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1 – 2 µm Developers We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® TFP 650 Photoresist english Sicherheitsdatenblatt AZ® TFP 650 Fotolack german TDS: Technical Data Sheet AZ® TFP 650 english Information AZ® TFP 650 english Application Notes: Further Information about Photoresist Processing