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Merck Performance Materials GmbH
MicroChemicals GmbH
NB Technologies GmbH
TECHNIC France

0.25 l
0.50 l
1.00 l
2.50 l
5.00 l

0.25 l
0.50 l
1.00 l
2.50 l
3.785 l
5.00 l

0.10 l
0.25 l
0.50 l
1.00 l
2.50 l
3.785 l
5.00 l

GaAs
Glass
Quartz
Si
SiO2

inorganic
metal ion containing (MIC)
metal ion free (MIF)

1 inch
2 inch
3 inch
4 inch
5 inch
6 inch
8 inch
12 inch

Arsen

0.4 – 0.8 µm
0.5 – 1.0 µm
0.6 – 2.5 µm
0.7 - 1.2 µm
0.8 – 1.5 µm
0.9 – 1.3 µm
0.9 – 1.5 µm
1 –20 µm
1 – 20 µm
1.0 - 1.8 µm
1.0 – 1.8 µm
1.0 – 2.0 µm
1.1 – 2.0 µm
1.5 – 3.0 µm
2 – 10 µm
2.0 – 3.5 µm
2.5 –3.5 µm
2.5 – 5.0 µm
3 - 5 µm
3 - 6 µm
3.0 – 5.0 µm
4 - 25 µm
4.0 – 8.0 µm
5 - 20 µm
5.0 – 15.0 µm
5.0 – 20.0 µm
5.0 – 30.0 µm
8.0 - 20.0 µm
10.0 – 35.0 µm
15.0 – 100.0 µm
30 - 100 µm
30.0 – 150.0 µm

medium (1.6 - 5.0µm)
thick (> 5.1µm)
thin (< 1.5µm)

MicroChemicals GmbH
TECHNIC France

Borosilicate
CZ-Si
FZ-Si
Fused Silica
Quartz
Si + Si3N4 (0 nm)
Si + Si3N4 (50 nm)
Si + Si3N4 (60 nm)
Si + Si3N4 (70 nm)
Si + Si3N4 (80 nm)
Si + Si3N4 (100 nm)
Si + Si3N4 (150 nm)
Si + Si3N4 (300 nm)
Si + Si3N4 (500 nm)
Si + SiO2 (dry) (20 nm)
Si + SiO2 (dry) (50 nm)
Si + SiO2 (dry) (90 nm)
Si + SiO2 (dry) (100 nm)
Si + SiO2 (dry) (200 nm)
Si + SiO2 (dry) (280 nm)
Si + SiO2 (dry) (290 nm)
Si + SiO2 (dry) (300 nm)
Si + SiO2 (wet) (0 nm)
Si + SiO2 (wet) (250 nm)
Si + SiO2 (wet) (300 nm)
Si + SiO2 (wet) (500 nm)
Si + SiO2 (wet) (1000 nm)
cz-si

image reversal
negative
positive
spray coating

dip coating
dry etching
electroplating
lift-off
p. circuit board
spray coating
wet etching

100
110
111
ST-Cut
X-Cut
Y-Cut
Z-Cut

Ag
Au
Cu
In
NiMn
Pd
Sn

MOS
ULSI
VLSI

Dummy
Prime
Test

6 - 10 mm
11 - 20 mm
21 - 50 mm
51 - 100 mm

0 - 0.01 Ohm cm
0.01 - 0.1 Ohm cm
0.1 - 1 Ohm cm
1 - 10 Ohm cm
10 - 100 Ohm cm
100 - 1000 Ohm cm
1000 - 10000 Ohm cm
> 10000 Ohm cm

Ag
Al
Au
Co
Cr
Cu
Fe
GaAs
Mg
Mn
Mo
Ni
Pt
Sn
SnPd
Ti
TiN
TiW
V
W
Zn

Si
Si3N4
SiO2

0 - 100 nm
101 - 200 nm
201 - 300 nm
401 - 500 nm
701 - 1000 nm

0 - 100 nm
100 - 200 nm
201 - 300 nm
401 - 500 nm
701 - 1000 nm
1001 - 2000 nm
> 2 µm

1-side polished
2-side polished

100 - 200 µm
201 - 300 µm
301 - 400 µm
401 - 500 µm
501 - 700 µm
701 - 1000 µm
1001 - 2000 µm
> 2 mm
> 2000 µm

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AZ MIR 701 Photoresist (14 CPS) - 3.785 l

10070114

Bottle size: 3.785 l

AZ® MIR 701 (14CPS) High Resolution and Temperature Stability General Information AZ® 701 MIR (14CPS) is a positive thin resist (g-, h- and i-line sensitive), the main application of which is as a resist mask for dry etching, RIE, or lift-off processes. 300 nm resist lines attained with the AZ® 701 MIR 1.2µm structure after 130°C hardbake Product Features AZ® 701 MIR (14CPS) is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 130°C). AZ® 701 MIR (14CPS) achieves a resist film thickness of approx. 800 nm at a spin speed of 4000 rpm and, under optimized process parameters, allows a resolution well in the sub-micrometer range. If such a high resolution is not required and thicker resist layers are desired, the use of the higher-viscosity AZ® 701 MIR (29CPS) is recommended. If necessary, the AZ® 701 MIR (14CPS) can also be (even heavily) diluted with PGMEA = AZ® EBR Solvent. For wet-chemical etching, resists from the AZ® 1500 series with optimized resist adhesion are recommended in this resist film thickness range. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® MIR 701 (14CPS) Photoresist english Safety Data Sheet AZ® MIR 701 (14CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

Details

AZ MIR 701 Photoresist (29 CPS) - 3.785 l

10070129

Bottle size: 3.785 l

AZ® MIR 701 (29CPS) High Resolution and Temperature Stability General Information AZ® 701 MIR (29CPS) is a positive resist (g-, h- and i-line sensitive) in the medium resist film thickness range, whose main applications are as a resist mask for dry etching, RIE, or lift-off processes. 300 nm resist lines attained with the AZ® 701 MIR 1.2µm structure after 130°C hardbake Product Features AZ® 701 MIR (29CPS) is optimized for steep resist sidewalls and high stability against thermal softening (softening temperature approx. 130°C). It achieves a resist film thickness of approx. 2µm at a spin speed of 4000 rpm. If thinner layers or a higher resolution are desired, the use of the lower-viscosity AZ® 701 MIR (14CPS) is recommended. Alternatively, AZ® 701 MIR (14CPS) can easily be heavily diluted with PGMEA = AZ® EBR Solvent. For wet-chemical etching, resists from the AZ® 1500 series with optimized resist adhesion are recommended. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351B or AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal PGMEA = AZ® EBR Solvent can generally be used as a thinner for spin coating, which can also be used to remove edge ridges if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english Safety Data Sheet AZ® MIR 701 (29CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

Details

AZ NLOF 2020 Photoresist - 3.785 l

1A002020

Bottle size: 3.785 l

AZ® nLOF 2020 Thick Negative Resist for Lift Off General Information The i-line sensitive negative resist AZ® nLOF 2020 is, with a resist film thickness of approx. 2 µm, the thinnest member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications. 700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020. Product Properties AZ® nLOF 2020 covers a resist film thickness range of - depending on the spin speed - approx. 1.5 - 2.5 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are (slightly) negative, as desired for lift-off applications, because the upper resist areas receive a slightly higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. This undercut can only be increased to a limited extent using a lower exposure dose, because the low resist film thickness is in the range of the penetration depth of the exposure wavelength, meaning that even with low exposure doses it is always exposed through to the substrate. If even thinner resist layers are desired, the AZ® nLOF 2020 can be diluted with PGMEA = AZ® EBR Solvent or the use of AZ® LNR-003 can be considered. For thicker layers, we recommend the AZ® nLOF 2035 (approx. 3 - 4 µm) or the even thicker AZ® nLOF 2070 (> 5 µm), both of which differ from the AZ® nLOF 2020 only in the solvent content. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2020. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351Bare generally not suitable for the AZ® nLOF 2020. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2020 anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® nLOF2020 Photoresist english Safety Data Sheet AZ® nLOF2020 Photoresist german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2000 Series german Application Notes: Further Information about Photoresist Processing

Details

AZ NLOF 2035 Photoresist - 3.785 l

1A002035

Bottle size: 3.785 l

AZ® nLOF 2035 Thick Negative Resist for Lift Off General Information The i-line sensitive negative resist AZ® nLOF 2035 with a resist film thickness of approx. 3 - 4 µm is a member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications. 700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035. Product Properties AZ® nLOF 2035 covers a resist film thickness range of - depending on the spin speed - approx. 3 - 4 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are pronounced negative, as desired for lift-off applications, since the upper resist areas receive a higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. Using a lower exposure dose, in conjunction with a slightly hotter post exposure bake, this undercut can be increased to a certain extent to enable even more critical lift-off applications. If thinner resist layers are desired, the AZ® nLOF 2035 can be diluted with PGMEA = AZ® EBR Solvent or the AZ® nLOF 2020 can be used. For thicker layers, the AZ® nLOF 2070 (> 5 µm) is recommended; both differ from the AZ® nLOF 2035 only in the solvent content. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2035. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are generally not suitable for the AZ® nLOF 2035. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2035 anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® nLOF2035 Photoresist english Safety Data Sheet AZ® nLOF2035 Photoresist german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2000 Series german Application Notes: Further Information about Photoresist Processing

Details

AZ NLOF 2070 - diluted 1:1.33 - 0.5 µm-grade (e-beam) - 5.00 l

20705005

Bottle size: 5.00 l

AZ® nLOF 2070 - diluted 1:1.33 - 0.50 µm-grade (e-beam) Thick Negative Resist for Lift Off General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2000 Series german Information AZ® nLOF2070 E-beam english Application Notes: Further Information about Photoresist Processing

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Details

AZ NLOF 2070 Photoresist - 3.785 l

1A002070

Bottle size: 3.785 l

AZ® nLOF 2070 Thick Negative Resist for Lift Off General Information The i-line sensitive negative resist AZ® nLOF 2070 is with approx. 5 - 10 µm resist film thickness the thickest member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications. A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm. Product Properties AZ® nLOF 2070 covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are, as desired for lift-off applications, distinctly negative, since the upper resist areas receive a much higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. Using a lower exposure dose, in conjunction with a slightly hotter post exposure bake, this undercut can also be increased significantly to enable more critical lift-off applications (sputtered or thicker layers). If thinner resist layers are required, the AZ® nLOF 2070 can be diluted with PGMEA = AZ® EBR Solvent or the AZ® nLOF 2035 or even thinner AZ® nLOF 2020 can be used, both differing only in the solvent content. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2070. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are generally not suitable for the AZ® nLOF 2070. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2070 anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Safety Data Sheet AZ® nLOF2070 Photoresist german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2000 Series german Application Notes: Further Information about Photoresist Processing

Details

AZ NLOF 5510 Photoresist - 3.785 l

1055100

AZ® nLOF 5510 Thermally Stable Negative Resist General Information The AZ® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers. Product Properties AZ® nLOF 5510 for film thickness 0.8 µm @ 4000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more Resolution down to 0.25 µm Can be used for lift off, RIE or implant applications Developers Common TMAH based developers are recommended such as AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF Developer. Removers The recommended stripper for the AZ® nLOF 5510 resist is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 5510 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF5510 Photoresist english Sicherheitsdatenblatt AZ® nLOF5510 Fotolack german TDS: Technical Data Sheet AZ® nLOF5510 english Information AZ® nLOF2000 Series english Information AZ® nLOF2000 Series german Application Notes: Further Information about Photoresist Processing

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AZ P4110 Photoresist - 3.785 l

1A0P4110

AZ® P4110 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers. Product Properties Resist film thickness: 0.9 - 1.3 µm Steep wall profiles, high aspect ratios Sensitive to g-, h-, and i-line Recommended developers: KOH-based (e.g. AZ® 400K) or TMAH-based (e.g. AZ® 2026 MIF) Standard strippers (e.g. AZ® 100 Remover, TechniStrip P1316) Thinner and edge bead remover: AZ® EBR Solvent or PGMEA Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4110 Photoresist english Sicherheitsdatenblatt AZ® P4110 Fotolack german TDS: Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

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AZ P4620 Photoresist - 3.785 l

1A0P4620

Bottle size: 3.785 l

AZ® P4620 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers. AZ® P4620 (15µm holes at 24µm film thickness for Au plating) Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 5 - 30 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR 70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4620 Photoresist english Sicherheitsdatenblatt AZ® P4620 Fotolack german TDS: Technical Data Sheet AZ® P4620 Photoresist english Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

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AZ P4903 Photoresist - 3.785 l

1A0P4903

AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 10 - 35 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4903 Photoresist english Sicherheitsdatenblatt AZ® P4903 Fotolack german TDS: Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

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AZ P4K-AP Coating - 3.785L

10P4KAP

Bottle size: 3.785 l

AZ® P4K-AP Protective Coating General Information AZ® P4K-AP is a cost-effective coating for the protection of device surfaces during operations such as back-lap or backside etch. It is based on Novolak resin and is resistant to most etchants. The thickness of this coating is 6.8 µm at 4000 rpm spin speed. Please note, that the protective coating AZ® P4K-AP is not stable in KOH-etches typically used for silicon etching. Product Properties AZ® P4K-AP is a blend of resin and solvent components typical of fully formulated photoresists. The AZ® P4K-AP Protective Coating excludes the photoactive component of a fully formulated photoresist, thus removing material and QA related costs for applications where photolithographic performance in unnecessary. AZ® P4K-AP uses the same base materials as the industry standard AZ® P4620 photoresist. It offers: Superior adhesion to a wide variety of substrates Compatible with many wet chemistries, both etch and plating Good coating properties Standard photoresist coating processes are used The AZ® P4K-AP can be used in: Dry etch processes Wet etch processes Plating processes The AZ® P4K-AP is removed/stripped in standard wet or dry photoresist removal processes. Developers AZ® P4K-AP is not a photoresist, therefore there is no developer required. Removers AZ® P4K-AP can be removed with all common photoresist strippers such as: Acetone, alkaline solutions, AZ® 100 Remover, DMSO, AZ® 920 Remover and TechniStrip P1316. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal PGMEA and AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® P4K-AP Photoresist english Sicherheitsdatenblatt AZ® P4K-AP Fotolack german TDS: Technical Data Sheet AZ® P4K-AP Photoresist english Application Notes: Further Information about Photoresist Processing

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AZ Remover 910 - 5.00 l

1000910

AZ® Remover 910 Organic Solvent Based Remover General Information AZ® Remover 910 is designed to strip and dissolve positive and negative-tone, chemically amplified and DNQ/Novolak resists. It is a solvent based product that contains acids and is therefore acidic. The formulation is EH&S friendly, it contains no NMP, DMAC, DMSO and no TMAH and it is amine free. It is especially suited for our cross-linking negative resists such as AZ® nLof 2070, 2035 and 2020, the AZ® nLof 5110 and the AZ® 15nXT series resists. Compatibility It is suitable for processes where sensitive metals and other materials are exposed. It shows low etch rates on: Al, Cu, Ti, W, TiW, TiN, Sn, Ni Si, SiO2 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data Sheet AZ® Remover 910 english Sicherheitsdatenblatt AZ® Remover 910 german TDS: Technical Data Sheet AZ® Remover 910 english Application Notes: Photoresist Removal english Entfernen von Fotolack german

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AZ Remover 920 - 5.00 l

1000920

AZ® Remover 920 Organic Solvent Based Remover General Information AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films. Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking). Product Properties Flashpoint: 84.4°C Viscosity (20°C): 1.84 cSt Boiling point: 188°C Density (at 25°C): 1.084 g/cm3 Compatibility Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni Substrates: Si, SiO2, GaAs Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Main Features Fast delamination of photoresist patterns Broad compatibility Environmentally friendly Some Applications Bulk Photoresist Removal Metal Lift-off Lithography Cu Pillar Metallization Cleans RDL Metallization Cleans Delamination of Heavily Cured Photoresist Patterns & Organic Residues Further Information MSDS: Safety Data Sheet AZ® Remover 920 english Sicherheitsdatenblatt AZ® Remover 920 german TDS: Technical Data Sheet AZ® Remover 920 english Application Notes: Photoresist Removal english Entfernen von Fotolack german

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AZ TFP-650F5 (15CP) Photoresist - 3.785 l

34000511

AZ® TFP 650 Flat Panel Display Photoresist General Information The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers. Product Properties Ultra high photospeed Low dark film loss Optimized resist adhesion Easy removal after hardbake High resistance to harsh etchants Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1 – 2 µm Developers We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® TFP 650 Photoresist english Sicherheitsdatenblatt AZ® TFP 650 Fotolack german TDS: Technical Data Sheet AZ® TFP 650 english Information AZ® TFP 650 english Application Notes: Further Information about Photoresist Processing

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BOE 7:1 (87,5 : 12,5) - 2.50 l - VLSI - EVE/EUD!

TBOV1025

BOE 7:1 Buffered Oxide Etch General Information BOE is mainly used for etching glasses, quartz and SiO2 films. We supply BOE 7:1 = buffered hydrofluoric acid (HF : NH4F = 12.5 : 87.5%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. NOTE: BOE must be stored and transported above +12.5°C. Below this critical temperature of 12.5°C the material forms particles (little crystals). Since these crystals have a higher density, they will accumulate at the bottom of the bottle and will only be completely re-dissolved when the material is stored at temperatures of 30 - 35°C for some days. After this procedure the crystals should be re-dissolved completely and the BOE can be then used without restrictions. Further Information MSDS: Safety Data Sheet BOE 7:1 (VLSI) english Sicherheitsdatenblatt BOE 7:1 (VLSI) german Specs: Specs BOE 7:1 (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing

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Buch "Fotolithografie - Grundlagen der Mikrostrukturierung"

buch2017202

Language: German

Photolithography- Basics of Microstructuring Book German Version With this book, we would like to give you comprehensive, application-oriented know-how on wafers, photo chemicals and the structuring steps carried out with these. Theoretical basics are dealt with only to the extent as they are helpful for the understanding of the relationships between the process parameters. This keeps the focus on the description and explanation of practical examples. We unfortunately cannot (always) give you ready-to-use recipes with guaranteed success on the way into the clean room. Rather, in the following chapters, our main objective is to provide you with all the necessary understanding for the planning, realization and optimization of your lithographic processes in all sub-steps with a minimum of time. If you are interested in our book, please add it to your order or just fill in the form. Our book is only available as a printed version. You can download some chapters as application notes.

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