Bases
Ammonium hydroxide solution 28-30% - 2.50 l - VLSI - EVE/EUD!
HAMV1025
Ammonia Solution
NH4OH
General Information
Mixed with H2O2, Ammonia is an ingredient of many etching mixtures for metals such as copper, silver or aluminum.
Our Ammonia solution (28 - 30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet Ammonium Hydroxide Solution (VLSI) 28-30% english
Specs:
Specs Ammonium Hydroxide Solution (VLSI) 28-30%
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
KOH 44% - 2.50 l - VLSI
TKOV1025
KOH
Potassium Hydroxide
General Information
KOH is mainly used for anisotropic silicon etching.
We supply KOH (44 %) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet KOH Solution 44% (VLSI) english
Sicherheitsdatenblatt KOH Solution 44% (VLSI) german
Specs:
Specs KOH Solution 44% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
TMAH 25% - 2.50 l - VLSI - EVE/EUD!
TTMV1025
TMAH
Tetramethylammonium hydroxide
General Information
TMAH is mainly used for anisotropic silicon etching when metal ion free processing is required.
TMAH (25%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet TMAH 25 % (VLSI) english
Sicherheitsdatenblatt TMAH 25 % (VLSI) german
Specs:
Specs TMAH 25 % (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german