CZ-Si wafer 4 inch 625 um (100) SSP B-doped

Dummy CZ-Si wafer 625 µm 100

€8.50*

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Product number: WSV40625250B1314SNN1
Product information "CZ-Si wafer 4 inch 625 um (100) SSP B-doped"

Dummy CZ-Si wafer 4 inch, thickness = 625 ± 25 µm, (100), 1-side polished, p-type (Boron) , 1 - 10 Ohm cm, not particle specified

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm