CZ-Si wafer 4 inch 525 um (100) SSP B-doped
MWCTI100BBYYYCCZZZ01
Prime CZ-Si wafer 4 inch, thickness = 525 ± 15 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 10 - 20 Ohm cm, Flats: 2, metallized one side with Ti 500nm +/- 5%
Stock:
2
From
€54.70*
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
MWCTI002PT020CCZZZ01
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2, metallized one side with Ti: 10 nm and Pt: 100 nm, small individual defects in the layer possible but not mandatory
Stock:
13
From
€76.90*