One product found for "WTV40525250B1050S281"
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
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€21.00*
WTD40525250B1050S281
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)
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€21.00*