Skip to main content

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

Prime Si + SiO2 (dry) (280 nm) wafer 525 µm 100

Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)

Diameter (round): 4 inch
Material: Si + SiO2 (dry) (280 nm)
Orientation: 100
Quality: Prime
Resistivity: 0 - 0.01 Ohm cm
SiO2 thickness: 201 - 300 nm
Surface: 1-side polished
Thickness: 501 - 700 µm