Si + wet SiO2 wafer 3 inch 381 um (100) SSP B-doped

Prime Si + SiO2 (wet) (0 nm) wafer 381 µm 100
Quantity Unit price
To 4
€51.50*
To 9
€41.80*
To 24
€37.00*
To 49
€32.00*
To 99
€28.00*
To 199
€26.00*
From 200
€25.00*
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Product number: WWD30381250B1314SXX1
Product information "Si + wet SiO2 wafer 3 inch 381 um (100) SSP B-doped"

Prime Si + wet SiO2 wafer 3 inch, thickness = 381 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 3000 nm SiO2

Diameter (round): 3 inch
Material: Si + SiO2 (wet) (0 nm)
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
SiO2 thickness: > 2 µm
Surface: 1-side polished
Thickness: 301 - 400 µm