Skip to main content

CZ-Si wafer 1 inch 150 um (100) DSP B-doped

Prime CZ-Si wafer 150 µm 100

Product information "CZ-Si wafer 1 inch 150 um (100) DSP B-doped"

Prime CZ-Si wafer 1 inch, thickness = 150 ± 25 µm, (100), 2-side polished, p-type (Boron), 0.008 - 0.02 Ohm cm, no flat

Diameter (round): 1 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 0.01 - 0.1 Ohm cm
Surface: 2-side polished
Thickness: 100 - 200 µm