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CZ-Si wafer 2 inch 2000 um (100) SSP B-doped

Prime CZ-Si wafer 2000 µm 100

Product information "CZ-Si wafer 2 inch 2000 um (100) SSP B-doped"

Prime CZ-Si wafer 2 inch, thickness = 2000 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 20 Ohm cm, Flat: SEMI Standard, units of 25 wafers stacked

Diameter (round): 2 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 1000 - 2000 µm