Skip to main content Skip to search Skip to main navigation
Menu

CZ-Si wafer 4 inch 525 um (111) SSP B-doped

Prime CZ-Si wafer 525 µm 111

Description

Product information "CZ-Si wafer 4 inch 525 um (111) SSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (111), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm