Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped
Prime Si + SiO2 (wet) (0 nm) wafer 675 µm 100
Quantity | Unit price |
---|---|
To 4 |
€54.00*
|
To 9 |
€45.00*
|
To 24 |
€38.40*
|
To 49 |
€32.00*
|
To 99 |
€30.50*
|
From 100 |
€29.00*
|
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Product number:
WWD6067525XP1314SXX1
Product information "Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped"
Prime Si + wet SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm +/- 10 % thermally grown SiO2 on both sides, no second flat
Diameter (round): | 6 inch |
---|---|
Material: | Si + SiO2 (wet) (0 nm) |
Orientation: | 100 |
Quality: | Prime |
Resistivity: | 1 - 10 Ohm cm |
SiO2 thickness: | 701 - 1000 nm |
Surface: | 1-side polished |
Thickness: | 501 - 700 µm |