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Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped

Prime Si + SiO2 (wet) (0 nm) wafer 675 µm 100

Product information "Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped"

Prime Si + wet SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm +/- 10 % thermally grown SiO2 on both sides, no second flat

Diameter (round): 6 inch
Material: Si + SiO2 (wet) (0 nm)
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
SiO2 thickness: 701 - 1000 nm
Surface: 1-side polished
Thickness: 501 - 700 µm