MC PRL33C - 2.50 l
PRL33C is a general-purpose positive resist, dyed with a blue-green colour.
€775.00*
Available in 14 days, delivery time 3-4 days
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Product number:
MPRL33C2500
Description
Product information "MC PRL33C - 2.50 l"
MC PRL33C
Positive Thick Resist
General Information
MC PRL33C is a positive tone liquid photoresist for the application in various coating techniques, especially for printed circuit boards manufacturing. MC PRL33C is dyed with a blue/green colour for easy inspection after coating. It can be used for spin coating as well as for spray- or roller-coating. It is especially suited for wet chemical etching due to its outstanding adhesion properties and chemical stability. It is a general-purpose resist and fits to all applications where high resolution and high thermal stability are not important. The MC PRL33C is a more inexpensive resist for lower demands regarding resolution and sidewall steepness. With a resist film thickness of approx. 5 µm at 4000 rpm, a resolution of approx. 4 - 5 µm is possible.
Product Properties
- Good drying behaviour
- Aqueous-alkaline processability
- MC BuEL Solvent-based formulation (mixture of butylacetate and ethyllactate)
- Very good adhesion properties to many types of substrates
- Blue/green coloured for easy inspection
- Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
- g-, h- and i-line sensitive (approx. 320 - 440 nm)
- Resist film thickness range approx. 3 - 8 µm
Developers
As a developer, we recommend the NaOH-based AZ® 351B, the KOH-based AZ® 400K or TMAH-based developer such as the AZ® 2026 MIF. AZ Developer and even simple aqueous KOH or NaOH solutions can be used.
Removers
For non-cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harshly treated or hard to remove resist residuals.
Thinning/ Edge Wall Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent, MC BuEl Solvent, or MEK. AZ® EBR 70/30 Solvent is possible as well for edge bead removal.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet MC PRL33C Photoresist english
Safety Data Sheet MC PRL33C Photoresist german
TDS:
Technical Data Sheet MC PRL33C english
Application Notes:
Further Information about Photoresist Processing
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AZ 3DT-102M-15 - 3.785 l
13DT102153
AZ® 3DT-102M-15
Chemically Amplified Positive Photoresist
General Information
AZ® 3DT-102M-15 is a chemically amplified positive tone photoresist with a very high aspect ratio. It is intended for the use as a mask for dry etching, ion implantation, RDL and electroplating applications (Cu-compatible). It can be used with i-line steppers as well as with conventional mask aligners. The AZ® 3DT-102M-15 is intended for a thickness range of 8 - 20 µm.
Product Properties
Steep sidewalls
Compatible with-copper plating-processes
For TSV, implantation, RDL, electroplating, dry etching
Chemically amplified à PEB obligatory
Compatible with most photoresist stripper (e.g. AZ® 100 Remover, organic solvent based or alkaline)
i-line sensitive (can be used for broadband exposure as well)
Resist film thickness range ca. 8 - 20 µm
Developers
The recommended developers are AZ® 326 MIF or AZ® 726 MIF for the photoresist AZ® 3DT-102M-15.
Removers
The recommended strippers for the AZ® 3DT-102M-15 are AZ® 920 Remover, AZ® 100 Remover, TechniStrip P1316, TechniStrip P1331 and TechniStrip MLO07.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 3DT-102M-15 Photoresist english
Sicherheitsdatenblatt AZ® 3DT-102M-15 Fotolack german
TDS:
Technical Data Sheet AZ® 3DT-102M-15 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 10XT Photoresist (520cP) - 3.785 l
1A010XT00
Bottle size:
3.785 l
AZ® 10XT (520CPS)
Thick photoresist for high resolution
General Information
AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® 9260 and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.
3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)
Product Features
AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of 4000 rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® 4533 can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS 6090 (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure.
Developers
For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning / Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 10XT (520cps) english
Safety Data Sheet AZ® 10XT (520cps) german
TDS:
Technical Data Sheet AZ® 10XT (520cps) english
Anwendungshinweis:
Further Information about Photoresist Processing
AZ 12XT-20PL-15 Photoresist - 3.785 l
1A012XT1500
AZ® 12XT-20PL-15
Chemically Amplified Positive Tone Photoresists
General Information
AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.
AZ® 12XT - 2.4mm lines at 10mm film thickness
Product Features
AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS 6090 should be considered.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 12XT 20PL-15 english
Safety Data Sheet AZ® 12XT 20PL-15 german
TDS:
Technical Data Sheet AZ® 12XT 20PL-15 english
Application Notes:
Further Information about Photoresist Processing
AZ 40XT-11D Photoresist - 3.785 l
10040XT
Bottle size:
3.785 l
AZ® 40XT
Chemically Amplified Thick Photoresist
General Information
AZ® 40XT is a chemically amplified, i-line sensitive ultra-thick photoresist for high aspect ratios.
Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose
Product Features
AZ® 40XT covers a resist film thickness range of approx. 15 - 50 µm. As a chemically amplified resist, the AZ® 40XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it particularly suitable for galvanic molding for e.g. Cu, Ni or Au. In principle, the AZ® 40XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. It should be noted that with these chemically amplified photoresists, the post exposure bake is not optional but mandatory in order to complete the photo reaction induced during exposure and to enable subsequent development. If thinner photoresist layers than approx. 15 µm are desired, the AZ® 40XT can easily be diluted with PGMEA = AZ® EBR Solvent. If bubbles appear in the photoresist layer during the soft bake or post exposure bake, which can occur particularly with thicker photoresist layers, either a slow temperature ramp in these baking processes or a multi-stage baking process with increasing temperatures will help. If these measures are not an option, or if the formation of bubbles cannot be avoided despite this measure, we recommend using the ultra-thick photoresist AZ® IPS 6090, which is also chemically amplified.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are less suitable for the AZ® 40XT.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 40XT.anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 40XT Photoresist english
Safety Data Sheet AZ® 40XT Fotolack german
TDS:
Technical Data Sheet AZ® 40XT Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 4533 Photoresist - 3.785 l
1A004533
Bottle size:
3.785 l
AZ® 4533
Thick Resists with Optimized Adhesion
General Information
AZ® 4533 belongs to the AZ® 4500 series of positive resists (g-, h- and i-line sensitive) in the medium resist film thickness range, the main application of which is as a resist mask for wet etching or electroplating.
Product Properties
AZ® 4500 resist family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but rather for very high adhesion to all common substrate materials. The low photoinitiator concentration of the AZ® 4500 series resists compared to thin resists (such as the AZ® 1500 series) allows the exposure of even thicker resist layers without the risk of nitrogen bubbles forming in the resist layer.
AZ® 4533 is often used for etching metallic or non-metallic layers. AZ® 4533 achieves a resist film thickness of approx. 3.3 µm at a spin speed of 4000 rpm. With a correspondingly adjusted spin profile, the resist film thickness range of approx. 2.5 - 5 µm can be covered. If thinner resist layers are desired, the use of the AZ® 1500 series is recommended, or a dilution of the AZ® 4533 with PGMEA = "AZ® EBR Solvent". Thicker resist layers can be achieved with the AZ® 4562, which differs from the AZ® 4533 only in the lower solvent content.
Developers
For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or 726 MIF, or the KOH-based AZ® 400K (typically 1:4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted "AZ® Developer”.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 4533 anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 4533 Photoresist english
Safety Data Sheet AZ® 4533 Photoresist german
TDS:
Technical Data Sheet AZ® 4533 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 4562 Photoresist - 3.785 l
1A004562
Bottle size:
3.785 l
AZ® 4562
Thick Resists with Optimized Adhesion
General Information
AZ® 4562 belongs to the AZ® 4500 series of positive resists (g-, h- and i-line sensitive) in the medium to high resist film thickness range, the main application of which is as a resist mask for wet etching or electroplating.
Product Properties
AZ® 4500 resist family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but rather for very high adhesion to all common substrate materials. The low photoinitiator concentration of the AZ® 4500 series resists compared to thin resists (such as the AZ® 1500 series) allows the exposure of even thicker resist layers without the risk of nitrogen bubbles forming in the resist layer.
AZ® 4562 is often used in electroplating or for etching metallic or non-metallic layers. AZ® 4562 achieves a resist film thickness of approx. 6 µm at a spin speed of 4000 rpm. With an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist films are required, the AZ® 4533 is recommended, which differs from the AZ® 4562 only in the higher solvent content. From approx. 10 µm, processing the AZ® 4562 becomes increasingly time-consuming: the soft bake and subsequent development take longer, rehydration between the soft bake and exposure requires more and more time, and there is also the risk of nitrogen bubbles forming during exposure. For resist film thicknesses greater than 10-20 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 -20 µm resist film thickness) or IPS 6090 (> 20 µm resist film thickness), which have significantly shorter softbake and development times at the corresponding resist thickness and do not require rehydration and significantly lower exposure doses.
Developers
For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or 726 MIF, or the KOH-based AZ® 400K (typically 1:4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07**.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 4562 anyway and is also recommended for edge removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 4562 Photoresist english
Safety Data Sheet AZ® 4562 Photoresist german
TDS:
Technical Data Sheet AZ® 4562 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ IPS-6090 Photoresist - 3.785 l
1006090
Bottle size:
3.785 l
AZ® IPS-6090
Positive Thick Resist
General Information
AZ® IPS-6090 is a chemically amplified, i-line sensitive ultra-thick photoresist for high aspect ratios.
AZ® IPS 6050 (80 µm resist film thickness)
Product Properties
AZ® IPS-6090 covers a resist film thickness range of approx. 15 - 50 µm. As a chemically amplified resist, the AZ® IPS-6090 does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it particularly suitable for galvanic molding. In principle, the AZ® IPS-6090 is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. It should be noted that with these chemically amplified photoresists, the post exposure bake is not only optional, but absolutely necessary in order to complete the photoreaction induced during exposure and to enable subsequent development. If thinner photoresist layers than approx. 15 µm are desired, the AZ® IPS 6090 can easily be diluted with PGMEA = AZ® EBR Solvent.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400K.or AZ® 351B are less suitable for the AZ® 40 XT.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® IPS-6090 anyway and is also recommended for edge ridge removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® IPS-6090 Photoresist english
Safety Data Sheet AZ® IPS-6090 Photoresist german
TDS:
Technical Data Sheet AZ® IPS-6090 english
Information AZ® IPS-6090 english
Application Notes:
Further Information about Photoresist Processing
AZ P4110 Photoresist - 3.785 l
1A0P4110
AZ® P4110
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Resist film thickness: 0.9 - 1.3 µm
Steep wall profiles, high aspect ratios
Sensitive to g-, h-, and i-line
Recommended developers: KOH-based (e.g. AZ® 400K) or TMAH-based (e.g. AZ® 2026 MIF)
Standard strippers (e.g. AZ® 100 Remover, TechniStrip P1316)
Thinner and edge bead remover: AZ® EBR Solvent or PGMEA
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4110 Photoresist english
Sicherheitsdatenblatt AZ® P4110 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4620 Photoresist - 3.785 l
1A0P4620
Bottle size:
3.785 l
AZ® P4620
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
AZ® P4620 (15µm holes at 24µm film thickness for Au plating)
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR 70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4620 Photoresist english
Sicherheitsdatenblatt AZ® P4620 Fotolack german
TDS:
Technical Data Sheet AZ® P4620 Photoresist english
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4903 Photoresist - 3.785 l
1A0P4903
AZ® P4903
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 10 - 35 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4903 Photoresist english
Sicherheitsdatenblatt AZ® P4903 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
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Developer
AZ Developer - 5.00 l
1000001
AZ® Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® Developer is a sodium salt-based, aluminum-compatible developer for non-chemically amplified positive resists.
Product Features
AZ® Developer is based on an aqueous Sodium metasilicate/Sodium phosphate solution. In contrast to NaOH, KOH or TMAH-based developers, this developer does not show any significant aluminum attack and is suitable for the development of non-chemically amplified positive resists. For thicker resist layers or when the requirements for resolution and steepness of the resist sidewalls are not too high, the AZ® Developer can be used undiluted. For thin resists and higher resolution requirements, it can be diluted 1:1 with water. An AZ® Developer: Water = 2:1 dilution represents a good compromise for many applications. For negative resists or chemically amplified positive resists, the AZ® Developer usually does not show satisfactory results. TMAH-based developers are recommended for these, but these are not aluminum compatible.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® Developer english
Safety Data Sheet AZ® Developer german
TDS:
Technical Data Sheet AZ® Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 726 MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio.
Product Features
The ready-to-use AZ® 726 MIF Developer is an aqueous 2.38% TMAH solution with a surfactant for even substrate wetting for puddle development, but is also suitable for immersion development. For spray development, the surfactant-free AZ® 326 MIF would be the better choice to avoid foaming. TMAH-based developers are always used when metal ion-free development is required. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement for metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, the AZ® 2026 MIF can prove to be advantageous, as it promotes residue-free development with these resists thanks to certain additives. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 726 MIF Developer with water (AZ® 726 MIF: water = 2:1 to a maximum of 1:1). AZ® 726 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, but this is based on sodium compounds and is therefore not free of metal ions.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 726 MIF Developer english
Safety Data Sheet AZ® 726 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 351 B Developer - 5.00 l
1000351
AZ® 351B Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® 351B Developer is a boric acid buffered, NaOH-based developer for non-chemically amplified positive resists.
Product Features
AZ® 351B Developer is a NaOH-based developer, particularly suitable for developing non-chemically amplified positive resists with layer thicknesses of a few µm. AZ® 351B Developer comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be applied, but this significantly reduces the development rate and is therefore not a reasonable option for thicker resist films. If the requirements for steep resist sidewalls are low, the AZ® 351B can also be set stronger (1:3.5 - 1:3) if higher development rates are required , but this leads to a disproportionate increase in dark erosion. AZ® 351B is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 351B attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 351B Developer english
Safety Data Sheet AZ® 351B Entwickler german
TDS:
Technical Data Sheet AZ® 351B Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® 400K Developer is a boric acid buffered, KOH-based developer for non-chemically amplified positive resists.
Product Features
As a KOH-based developer, AZ® 400K is particularly suitable for developing thicker, non-chemically amplified positive resists, but can also be used for thinner resist layers if the resolution requirements are not too high. AZ® 400K comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be selected, but this significantly reduces the development rate and is therefore not a reasonable option for thick resist processing. For very thick resist films and/or very steep resist sidewalls are not required, AZ® 400K can also be used at a stronger dilution (1:3.5 - 1:3), which increases the development rate but significantly increases the dark removal. AZ® 400K is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 400K attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 400K Developer english
Safety Data Sheet AZ® 400K Developer german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 2026 MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio.
Product Properties
The ready-to-use AZ® 2026 MIF developer is an aqueous 2.38% TMAH solution with a surfactant for uniform substrate wetting for puddle development, but is also suitable for immersion development. In addition, the AZ® 2026 MIF contains an additive to promote residue-free development with cross-linked resist structures. Since this additive slightly increases the dark erosion in positive resists, the AZ® 2026 MIF is less suitable for these resists, especially when high resolution requirements are required; in this case, the AZ® 326 MIF or AZ® 726 MIF would be the better choice. TMAH-based developers are always used when development has to be carried out metal ion free. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute AZ® 2026 MIF with water (AZ® 2026 MIF: water = 2:1 to a maximum of 1:1). AZ® 2026 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible "AZ® Developer " is an alternative, but this is based on sodium compounds and is therefore not metal ion-free.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Safety Data Sheet AZ® 2026 MIF Developer german
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Further Information about development of photoreist english
Further Information about development of photoresist german
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Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Etch Rates of AZ®100 Remover at 65°C (Å/min)
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german