Si + Si3N4 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + Si3N4 (0 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€110.00
|
| To 9 |
€110.00
|
| To 24 |
€90.00
|
| From 25 |
€78.00
|
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Stock:
6
Product number:
WND40525250B1314SNN1
Description
Product information "Si + Si3N4 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry/wet/dry SiO2 + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2000 nm SiO2 + 300 nm stoichiometric LPCVD Si3N4 on both sides