Si + Siliziumnitrid

9 Products

Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped

WNA30381250B1314SXX2

Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm low-stress Si3N4, 2 SEMI Flats

Stock: 8

From €61.00*

Details

Si + Si3N4 wafer 4 inch 325 um (100) SSP B-doped

WND40325250B1314S081

Prime Si + Si3N4 wafer 4 inch, thickness = 325 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 80 nm stoichiometric LPCVD Si3N4 on both sides, 2 SEMI Flats

Stock: 35

From €39.00*

Details

Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped

WNA40380155B1314S071

Prime Si + LPCVD Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 75 nm Si3N4, 2 SEMI Flats

Stock: 43

From €44.50*

Details

Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped

WNA40380155B1314S151

Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides, 2 SEMI Flats

Stock: 55

From €37.00*

Details

Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped

WNA40380155B1314SXX1

Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides, 2 SEMI Flats

Stock: 56

From €68.00*

Details

Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped

WNA40525155B1314S102

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides, Flats: 2

Stock: 28

From €34.00*

Details

Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped

WNA40525155B1314S501

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 500 nm low-stress LPCVD Si3N4 on both sides, 2 SEMI Flats

Stock: 41

From €50.00*

Details

Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped

WNA40525255B1314S301

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 300 nm LPCVD Si3N4 on both sides

Stock: 40

From €39.00*

Details

Si + Si3N4 wafer 4 inch 525 um (100) SSP B-doped

WND40525250B1314SNN1

Prime Si + dry/wet/dry SiO2 + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2000 nm SiO2 + 300 nm stoichiometric LPCVD Si3N4 on both sides, 2 SEMI Flats

Stock: 0

From €78.00*

Si + Siliziumnitrid

Filter products