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Si + dry SiO2 wafer 2 inch 0279 µm (100), SSP,B-doped

Prime Si + SiO2 (dry) (100 nm) wafer 279 µm 100

Description

Product information "Si + dry SiO2 wafer 2 inch 0279 µm (100), SSP,B-doped"

Prime Si + SiO2 (dry)-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2