Si + thermisches SiO2

39 Products

FZ Si + wet SiO2 wafer 4 inch 525 um (100) SSP

WWD40525250X1618S301

Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, TTV < 10 µm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry, 1 SEMI Flat

Stock: 25

From €50.00*

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Si + dry SiO2 wafer 1 inch 500 um (100) SSP

WTD10500250X2418S021

Prime FZ-Si + dry SiO2 wafer 1 inch, thickness = 500 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 20 - 100000 Ohm cm, 25 nm thermal SiO2 (+/- 15 %, with +/- 10 % on best effort) on both sides, primary flat 8 mm, intrinsic/undoped

Stock: 1224

From €8.40*

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Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP

W9TD10010005250200B2

Prime Square Si + dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 200 nm dry SiO2 (thermally grown on both sides), units of 10 wafers

Stock: 4

From €21.00*

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Si + dry SiO2 wafer 2 inch 0279 µm (100), SSP,B-doped

WTD20279200B1314S101

Prime Si + SiO2 (dry)-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100±10% nm SiO2, 2 SEMI Flats

Stock: 107

From €8.00*

Details

Si + dry SiO2 wafer 2 inch 279 um (100) SSP B-doped

WTD20279200B1051S051

Prime Si + dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2, 2 SEMI Flats

Stock: 217

From €9.50*

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Si + dry SiO2 wafer 3 inch 200 um (100) DSP

WTA30200250X1718S301

Prime FZ-Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, (> 10.000), 300 nm SiO2, 2 SEMI flats

Stock: 42

From €38.00*

Details

Si + dry SiO2 wafer 3 inch 200 um (100) SSP B-doped

WTD30200250B1314S301

Prime Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI flats

Stock: 96

From €14.00*

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Si + dry SiO2 wafer 3 inch 380 um (100) SSP

WTD30380100X5617S201

Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 10 µm, (100), 1-side polished, intrinsic (undoped), 5000 - 50000 Ohm cm, 200 nm thermal dry SiO2, 2 SEMI Flats

Stock: 216

From €32.00*

Details

Si + dry SiO2 wafer 3 inch 380 um (100) SSP B-doped

WTD30380250B1314S101

Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2, 1 Flat

Stock: 590

From €12.50*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525205B1050S291

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 µm, 2 SEMI Flats

Stock: 775

From €19.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525250B1050S091

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), 2 SEMI Flats

Stock: 0

From €20.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525250B1050S281

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD008-XXX, XXX = 001-999), 2 SEMI Flats

Stock: 788

From €19.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525250B1314S102

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2, 2 SEMI Flats

Stock: 299

From €19.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525250B1314S201

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 200 nm SiO2, 2 SEMI Flats

Stock: 589

From €17.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

WTD40525255B1011S091

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.01 Ohm cm, 90±10% nm SiO2, 2 SEMI flats

Stock: 492

From €18.00*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

MWCTI002PT020CCZZZ01

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2, metallized one side with Ti: 10 nm and Pt: 100 nm, small individual defects in the layer possible but not mandatory

Stock: 7

From €76.90*

Details

Si + dry SiO2 wafer 4 inch 525 um (100) SSP P-doped

WTD40525250P1314S101

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2, 2 SEMI Flats

Stock: 194

From €17.00*

Details

Si + dry SiO2 wafer 6 inch 675 um (100) SSP B-doped

WTD60675250B1314S101

Prime Si + dry SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 100 nm thermal SiO2 on both sides, 1 Flat/57.5mm

Stock: 0

From €28.00*

Details

Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped

WWD20279200B1314S301

Prime Si + dry/wet/dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI Flats

Stock: 157

From €8.00*

Details

Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped

WWD20279250B1314S501

Prime Si + wet SiO2 wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 500 nm dry/wet/dry thermally grown SiO2, 2 SEMI Flats

Stock: 525

From €8.50*

Details

Si + wet SiO2 wafer 3 inch 380 um (100) SSP B-doped

WWD30380250B1314S301

Prime Si + wet SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2 SEMI Flats, 300±5% nm SiO2

Stock: 674

From €12.80*

Details

Si + wet SiO2 wafer 3 inch 380 um (100) SSP B-doped

WWD30380250B1314SXX1

Prime Si + dry/wet/dry SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2, 1 SEMI flat

Stock: 44

From €15.00*

Details

Si + wet SiO2 wafer 3 inch 381 um (100) SSP B-doped

WWD30381250B1314SXX1

Prime Si + wet SiO2 wafer 3 inch, thickness = 381 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 3000 nm SiO2, 2 SEMI Flats

Stock: 184

From €25.00*

Details

Si + wet SiO2 wafer 4 inch 525 um (100) DSP B-doped

WWA40525150B1314SNN2

Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 300 nm SiO2, Flats:2

Stock: 95

From €22.00*

Si + thermisches SiO2

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