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Si + dry SiO2 wafer 3 inch 380 um (100) SSP

Prime Si + SiO2 (dry) (200 nm) wafer 380 µm 100

Product information "Si + dry SiO2 wafer 3 inch 380 um (100) SSP"

Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 10 µm, (100), 1-side polished, intrinsic (undoped), 5000 - 50000 Ohm cm, 200 nm thermal dry SiO2

Diameter (round): 3 inch
Material: Si + SiO2 (dry) (200 nm)
Orientation: 100
Quality: Prime
Resistivity: 1000 - 10000 Ohm cm
SiO2 thickness: 100 - 200 nm
Surface: 1-side polished
Thickness: 301 - 400 µm