Si + dry SiO2 wafer 3 inch 380 um (100) SSP
Prime Si + SiO2 (dry) (200 nm) wafer 380 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€59.50*
|
| To 9 |
€49.80*
|
| To 24 |
€45.00*
|
| To 49 |
€39.50*
|
| To 99 |
€36.00*
|
| To 199 |
€34.00*
|
| From 200 |
€32.00*
|
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Product number:
WTD30380100X5617S201
Product information "Si + dry SiO2 wafer 3 inch 380 um (100) SSP"
Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 10 µm, (100), 1-side polished, intrinsic (undoped), 5000 - 50000 Ohm cm, 200 nm thermal dry SiO2
| Diameter (round): | 3 inch |
|---|---|
| Material: | Si + SiO2 (dry) (200 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1000 - 10000 Ohm cm |
| SiO2 thickness: | 100 - 200 nm |
| Surface: | 1-side polished |
| Thickness: | 301 - 400 µm |