Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped
Prime Si + SiO2 (wet) (0 nm) wafer 625 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€48.50
|
| To 9 |
€38.50
|
| To 24 |
€32.50
|
| To 49 |
€26.50
|
| To 99 |
€24.50
|
| To 299 |
€22.50
|
| To 499 |
€18.50
|
| From 500 |
€18.00
|
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Stock:
146
Product number:
WWD40625250P1424SXX1
Description
Product information "Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped"
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 625 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 10 - 20 Ohm cm, 1000 nm SiO2 +/- 10 %, single flat 32,5 +/- 2,5 mm, no second flat