Si + thermisches SiO2
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Si + dry SiO2 wafer 2 inch 279 um (100) SSP B-doped
WTD20279200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2, 2 SEMI Flats
Stock:
227
From
€9.50*
Si + dry SiO2 wafer 2 inch 280 um (100) SSP B-doped
WTD20280200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 280 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2, 2 SEMI Flats
Stock:
76
From
€9.00*
Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped
WWD20279250B1314S501
Prime Si + wet SiO2 wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 500 nm dry/wet/dry thermally grown SiO2, 2 SEMI Flats
Stock:
575
From
€8.50*
Si + wet SiO2 wafer 3 inch 380 um (100) SSP B-doped
WWD30380250B1314SXX1
Prime Si + dry/wet/dry SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2, 1 SEMI flat
Stock:
119
From
€15.00*
Si + wet SiO2 wafer 3 inch 381 um (100) SSP B-doped
WWD30381250B1314SXX1
Prime Si + wet SiO2 wafer 3 inch, thickness = 381 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 3000 nm SiO2, 2 SEMI Flats
Stock:
189
From
€25.00*
Si + wet SiO2 wafer 4 inch 525 um (100) DSP B-doped
WWA40525150B1314SNN2
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 300 nm SiO2, Flats:2
Stock:
100
From
€22.00*
Si + wet SiO2 wafer 4 inch 525 um (100) DSP P-doped
WWA40525250P1314SXX1
Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 5000 nm SiO2, 2 SEMI flats
Stock:
218
From
€60.00*
Si + wet SiO2 wafer 4 inch 525 um (100) SSP As-doped
WWD40525250A1050S301
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Arsenic), 0.001 - 0.005 Ohm cm, 300 nm SiO2, 2 SEMI Flats
Stock:
84
From
€19.00*
Si + wet SiO2 wafer 4 inch 525 um (100) SSP B-doped
WWD40525250B1314S302
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI Flats
Stock:
250
From
€17.00*
Si + wet SiO2 wafer 4 inch 525 um (100) SSP B-doped
WWD40525250B1314S501
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm SiO2, 2 SEMI Flats
Stock:
327
From
€16.00*
Si + wet SiO2 wafer 4 inch 525 um (100) SSP P-doped
WWD40525250P1314SXX1
Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm SiO2, 2 SEMI Flats
Stock:
89
From
€24.00*
Si + wet SiO2 wafer 4 inch 525 um (100) SSP P-doped
WWD40525250P1314SXX2
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor), TTV < 10 µm, 1 - 10 Ohm cm, 2280 nm SiO2 +/- 5 %
Stock:
50
From
€42.00*
Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped
WWD6067525XP1314SXX1
Prime Si + wet SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm +/- 10 % thermally grown SiO2 on both sides, no second flat
Stock:
32
From
€29.00*
Square Si + wet SiO2 wafer 100x100 mm 525 um (100) SSP
W9WD10010005251000B1
Prime Square Si + dry/wet/dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 1000 nm wet SiO2 (thermally grown on both sides), units of 10 wafers
Stock:
95
From
€22.00*