CZ-Si wafer 8 inch 725 um (100) SSP B-doped
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Test CZ-Si wafer 8 inch, thickness = 725 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 100 Ohm cm, Bow/Warp < 40 µm, V notch, metallized one side with Cu: 100 nm
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349,00 €*