Borosilicate glass wafer 2 inch metallized Cr 10 nm, Au 100 nm
Ab
45,70 €*
MWGCR002AU020CCZZZ01
Borosilicate glass 2 inch glass wafer, thickness = 500 ± 25 µm, 2-side polished, primary flat 16 mm, metallized one side with Cr: 10 nm and Au: 100 nm
FZ Si + wet SiO2 wafer 4 inch 525 um (100) SSP
Ab
50,00 €*
WWD40525250X1618S301
Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, TTV < 10 µm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry
Si + dry SiO2 wafer 1 inch 500 um (100) SSP
Ab
8,70 €*
WTD10500250X2418S021
Prime FZ-Si + dry SiO2 wafer 1 inch, thickness = 500 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 20 - 100000 Ohm cm, 25 nm thermal SiO2 (+/- 15 %, with +/- 10 % on best effort) on both sides, primary flat 8 mm, intrinsic/undoped
Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP
Ab
21,00 €*
W9TD10010005250200B2
Prime Square Si + dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 200 nm dry SiO2 (thermally grown on both sides), units of 10 wafers
Si + dry SiO2 wafer 2 inch 0279 µm (100), SSP,B-doped
Ab
8,00 €*
WTD20279200B1314S101
Prime Si + SiO2 (dry)-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Si + dry SiO2 wafer 2 inch 279 um (100) SSP B-doped
Ab
9,50 €*
WTD20279200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2
Si + dry SiO2 wafer 2 inch 280 um (100) SSP B-doped
Ab
9,00 €*
WTD20280200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 280 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2
Si + dry SiO2 wafer 3 inch 200 um (100) DSP
Ab
38,00 €*
WTA30200250X1718S301
Prime FZ-Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, (> 10.000), 300 nm SiO2, 2 SEMI flats
Si + dry SiO2 wafer 3 inch 200 um (100) SSP B-doped
Ab
14,00 €*
WTD30200250B1314S301
Prime Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI flats
Si + dry SiO2 wafer 3 inch 380 um (100) SSP
Ab
32,00 €*
WTD30380100X5617S201
Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 10 µm, (100), 1-side polished, intrinsic (undoped), 5000 - 50000 Ohm cm, 200 nm thermal dry SiO2
Si + dry SiO2 wafer 3 inch 380 um (100) SSP B-doped
Ab
13,00 €*
WTD30380250B1314S101
Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2, 1 Flat
Si + dry SiO2 wafer 4 inch 525 um (100) SSP As-doped
Ab
18,00 €*
WTD40525250A1050S201
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Arsenic) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 200 nm SiO2
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
19,00 €*
WTD40525205B1050S291
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 µm
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
17,00 €*
WTD40525205B1050S293
Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), !! surface shows some kind of "haze" which can be cleaned !!
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
20,00 €*
WTD40525250B1050S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD002-XXX, XXX = 001-999)
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
21,00 €*
WTD40525250B1050S281
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
19,00 €*
WTD40525250B1314S102
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
17,00 €*
WTD40525250B1314S201
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 200 nm SiO2
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
19,50 €*
WTD40525255B1011S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.01 Ohm cm, 90 nm SiO2
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
20,00 €*
WTM40525250B1050S281
Test Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 10 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), box has already been opened in clean room for SiO2 thickness measurements
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
14,00 €*
WTV40525250B1050S281
Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film
Si + dry SiO2 wafer 4 inch 525 um (100) SSP P-doped
Ab
17,00 €*
WTD40525250P1314S101
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Si + dry SiO2 wafer 6 inch 675 um (100) SSP B-doped
Ab
28,00 €*
WTD60675250B1314S101
Prime Si + dry SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 100 nm thermal SiO2 on both sides
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
Ab
27,50 €*
WNA30381250B1314S051
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides