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Si + thermisches SiO2
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Material
Si + Si3N4 (0 nm)
Si + Si3N4 (30 nm)
Si + Si3N4 (40 nm)
Si + Si3N4 (50 nm)
Si + Si3N4 (60 nm)
Si + Si3N4 (70 nm)
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Si + Si3N4 (500 nm)
Si + SiO2 (dry) (20 nm)
Si + SiO2 (dry) (50 nm)
Si + SiO2 (dry) (90 nm)
Si + SiO2 (dry) (100 nm)
Si + SiO2 (dry) (200 nm)
Si + SiO2 (dry) (280 nm)
Si + SiO2 (dry) (290 nm)
Si + SiO2 (dry) (300 nm)
Si + SiO2 (wet) (0 nm)
Si + SiO2 (wet) (90 nm)
Si + SiO2 (wet) (250 nm)
Si + SiO2 (wet) (300 nm)
Si + SiO2 (wet) (500 nm)
Si + SiO2 (wet) (1000 nm)
Orientation
100
111
Quality
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Rectangular Size
6 - 10 mm
21 - 50 mm
51 - 100 mm
Resistivity
0 - 0.01 Ohm cm
1 - 10 Ohm cm
10 - 100 Ohm cm
1000 - 10000 Ohm cm
> 10000 Ohm cm
Si3N4 thickness
0 - 100 nm
100 - 200 nm
201 - 300 nm
301 - 400 nm
401 - 500 nm
701 - 1000 nm
SiO2 thickness
0 - 100 nm
1 - 2 µm
100 - 200 nm
201 - 300 nm
401 - 500 nm
701 - 1000 nm
> 2 µm
Surface
1-side polished
2-side polished
Thickness
100 - 200 µm
201 - 300 µm
301 - 400 µm
401 - 500 µm
501 - 700 µm
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Name A-Z
Name Z-A
Preis aufsteigend
Preis absteigend
Topseller
Details
Borosilicate glass wafer 2 inch metallized Cr 10 nm, Au 100 nm
MWGCR002AU020CCZZZ01
Borosilicate glass 2 inch glass wafer, thickness = 500 ± 25 µm, 2-side polished, primary flat 16 mm, metallized one side with Cr: 10 nm and Au: 100 nm
Ab
45,70 €*
Details
FZ Si + wet SiO2 wafer 4 inch 525 um (100) SSP
WWD40525250X1618S301
Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, TTV < 10 µm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry
Ab
50,00 €*
Details
Si + dry SiO2 wafer 1 inch 500 um (100) SSP
WTD10500250X2418S021
Prime FZ-Si + dry SiO2 wafer 1 inch, thickness = 500 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 20 - 100000 Ohm cm, 25 nm thermal SiO2 (+/- 15 %, with +/- 10 % on best effort) on both sides, primary flat 8 mm, intrinsic/undoped
Ab
8,70 €*
Details
Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP
W9TD10010005250200B2
Prime Square Si + dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 200 nm dry SiO2 (thermally grown on both sides), units of 10 wafers
Ab
21,00 €*
Details
Si + dry SiO2 wafer 2 inch 0279 µm (100), SSP,B-doped
WTD20279200B1314S101
Prime Si + SiO2 (dry)-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Ab
8,00 €*
Details
Si + dry SiO2 wafer 2 inch 279 um (100) SSP B-doped
WTD20279200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2
Ab
9,50 €*
Details
Si + dry SiO2 wafer 2 inch 280 um (100) SSP B-doped
WTD20280200B1051S051
Prime Si + dry SiO2 wafer 2 inch, thickness = 280 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.05 Ohm cm, 50 +/- 30 nm SiO2
Ab
9,00 €*
Details
Si + dry SiO2 wafer 3 inch 200 um (100) DSP
WTA30200250X1718S301
Prime FZ-Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, (> 10.000), 300 nm SiO2, 2 SEMI flats
Ab
38,00 €*
Details
Si + dry SiO2 wafer 3 inch 200 um (100) SSP B-doped
WTD30200250B1314S301
Prime Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI flats
Ab
14,00 €*
Details
Si + dry SiO2 wafer 3 inch 380 um (100) SSP
WTD30380100X5617S201
Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 10 µm, (100), 1-side polished, intrinsic (undoped), 5000 - 50000 Ohm cm, 200 nm thermal dry SiO2
Ab
32,00 €*
Details
Si + dry SiO2 wafer 3 inch 380 um (100) SSP B-doped
WTD30380250B1314S101
Prime Si + dry SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2, 1 Flat
Ab
13,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP As-doped
WTD40525250A1050S201
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Arsenic) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 200 nm SiO2
Ab
18,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525205B1050S291
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 µm
Ab
19,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525205B1050S293
Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), !! surface shows some kind of "haze" which can be cleaned !!
Ab
17,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525250B1050S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD002-XXX, XXX = 001-999)
Ab
20,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525250B1050S281
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)
Ab
21,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525250B1314S102
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Ab
19,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525250B1314S201
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 200 nm SiO2
Ab
17,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTD40525255B1011S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.01 Ohm cm, 90 nm SiO2
Ab
19,50 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTM40525250B1050S281
Test Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 10 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), box has already been opened in clean room for SiO2 thickness measurements
20,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
WTV40525250B1050S281
Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film
Ab
14,00 €*
Details
Si + dry SiO2 wafer 4 inch 525 um (100) SSP P-doped
WTD40525250P1314S101
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Ab
17,00 €*
Details
Si + dry SiO2 wafer 6 inch 675 um (100) SSP B-doped
WTD60675250B1314S101
Prime Si + dry SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 100 nm thermal SiO2 on both sides
Ab
28,00 €*
Details
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314S051
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides
Ab
27,50 €*
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